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ISL81601 Scheda tecnica(PDF) 42 Page - Renesas Technology Corp |
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ISL81601 Scheda tecnica(HTML) 42 Page - Renesas Technology Corp |
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42 / 54 page ![]() FN9299 Rev.3.1 Page 42 of 53 May 27, 2021 ISL81601 5. Functional Description on the upper MOSFET, an action that boosts the 8V gate drive signal above VIN. The current required to drive the upper MOSFET is drawn from the internal 8V regulator supplied from either VIN or EXTBIAS pin. The BOOT to PHASE voltage is monitored internally. When the voltage drops to 5.95V at no switching condition, a minimum off-time pulse is issued to turn off the upper MOSFET and turn on the low-side MOSFET to refresh the bootstrap capacitor and maintain the upper driver bias voltage. To optimize EMI performance or reduce phase node ringing, a small resistor can be placed between the BOOT pin to the positive terminal of the bootstrap capacitor. Figure 55. Upper Gate Driver Circuit 5.14 Power-Good Indicator The power-good pin can monitor the status of the output voltage. PGOOD is true (open drain) 1.1ms after the FB_OUT pin is within ±10% of the reference voltage. There is no extra delay when the PGOOD pin is pulled LOW. BOOT UGATE PHASE VDD VIN ISL81601 CB RBOOT External Schottky |
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