Data Sheet

ADRF5080

SPECIFICATIONS

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Rev. 0 | 4 of 15

Table 1. Specifications (Continued)

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

Digital Control Input Voltage

VCTRL

0

VDD

V

RF Power Handling2

PIN

f = 100 MHz to 20 GHz, TCASE = 85°C3

Insertion Loss Path

RF signal is applied to RFC or through connected

RFx

33

dBm

Hot Switching

RF signal is applied to RFC or through connected

RFx

30

dBm

Case Temperature

TCASE

−40

+105

°C

1 For input linearity performance over frequency, see the Input Power Compression and Third-Order Intercept section.

2 For power derating over frequency, see Figure 2 and Figure 3.

3 For 105°C operation, the power handling derates from the TCASE = 85°C specification by 3 dB.

SINGLE-SUPPLY OPERATION SPECIFICATIONS

Positive supply voltage (VDD) = 3.3 V, negative supply voltage (VSS) = 0 V, LS voltage (VLS), EN voltage (VEN), V1, V2, or V3 = 0 V or VDD, and

TCASE = 25°C, with a 50 Ω system, unless otherwise noted. RFx refers to RF1 to RF8, and VCTRL is the digital control inputs voltage of the V1,

V2, and V3 pins.

The small signal and bias characteristics are maintained for the single-supply operation.

Table 2. Single-Supply Operation Specifications

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

100

20,000

MHz

SWITCHING

Rise Time and Fall Time

tRISE, tFALL

10% to 90% of RFOUT

50

ns

On Time and Off Time

tON, tOFF

50% VCTRL to 90% of RFOUT

150

ns

0.1 dB Settling Time

50% VCTRL to 0.1 dB of final RFOUT

300

ns

INPUT LINEARITY

0.1 dB Power Compression

P0.1dB

f = 100 MHz to 20 GHz

18

dBm

Third-Order Intercept

IP3

Two-tone input power = 20 dBm each tone, f = 15

GHz, Δf = 1 MHz

37

dBm

RECOMMENDED OPERATING CONDITIONS

RF Power Handling

f = 100 MHz to 20 GHz, TCASE = 85°C

Insertion Loss Path

RF signal is applied to RFC or through connected

RFx

15

dBm

Hot Switching

RF signal is applied to RFC or through connected

RFx

9

dBm

Case Temperature

TCASE

−40

+105

°C