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MB90F482 Scheda tecnica(PDF) 112 Page - fujitsu semiconductor

Il numero della parte MB90F482
Spiegazioni elettronici  16-bit Proprietary Microcontroller
PDF  120 Pages
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Produttore elettronici  FUJITSU [fujitsu semiconductor]
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MB90F482 Scheda tecnica(HTML) 112 Page - fujitsu semiconductor

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MB90480/485 Series
112
•Flash Memory Program/Erase Characteristics
* : The value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 °C) .
• Use of the X0/X1, X0A/X1A pins
• Sample use with external clock input
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
TA
= + 25 °C,
VCC
= 3.0 V
⎯
115
s
Excludes 00H programming
prior erasure
Chip erase time
⎯
7
⎯
s
Excludes 00H programming
prior erasure
Word (16-bit)
programming time
⎯
16
3600
µs
Excludes system-level overhead
Program/Erase cycle
⎯
10000
⎯⎯
cycle
Flash Memory Data
hold time
Average
TA
= + 85 °C
10
⎯⎯
year
*
X1
C3
C4
C2
C1
X0
X0A
X1A
When used with a crystal oscillator
Pull-up
resistance 1
Damping
resistance 1
Damping
resistance 2
Internal
damping
resistance 0
In normal use :
Internal damping resistance 0 : Typ 600
Ω
Consult with the oscillator manufacturer.
Pull-up resistance 1,
Damping resistance 1, 2,
C1 to C4
X0
X1
OPEN
MB90480/485 series



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