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GD800HTX65P4S Scheda tecnica(PDF) 2 Page - StarPower Europe AG |
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GD800HTX65P4S Scheda tecnica(HTML) 2 Page - StarPower Europe AG |
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2 / 10 page ![]() GD800HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 2/10 Preliminary Absolute Maximum Ratings T F=25 oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ±20 V ICN Implemented Collector Current 800 A IC Collector Current @ TF=25 oC @ TF=75 oC 700 550 A ICM Pulsed Collector Current tp=1ms 1600 A PD Maximum Power Dissipation @ Tj=175 oC 1500 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse Voltage 650 V IFN Implemented Forward Current 800 A IF Diode Continuous Forward Current 550 A IFM Diode Maximum Forward Current tp=1ms 1600 A Module Symbol Description Value Unit Tjmax Maximum Junction Temperature 175 oC Tjop Operating Junction Temperature -40 to +150 oC TSTG Storage Temperature Range -40 to +125 oC VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V |
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