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GD800HTX65P4S Scheda tecnica(PDF) 3 Page - StarPower Europe AG

Il numero della parte GD800HTX65P4S
Spiegazioni elettronici  650V/800A 6 in one-package
PDF  10 Pages
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Produttore elettronici  STARPOWER [StarPower Europe AG]
Homepage  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD800HTX65P4S Scheda tecnica(HTML) 3 Page - StarPower Europe AG

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GD800HTX65P4S
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
3/27/2018
3/10
Preliminary
IGBT Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=550A,VGE=15V,
Tj=25
oC
1.30
1.60
V
IC=550A,VGE=15V,
Tj=125
oC
1.35
IC=550A,VGE=15V,
Tj=150
oC
1.40
VGE(th)
Gate-Emitter Threshold
Voltage
IC=12.80mA,VCE=VGE,
Tj=25
oC
5.1
5.8
6.5
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0.5
Ω
Cies
Input Capacitance
VCE=25V,f=1MHz,
VGE=0V
92.7
nF
Cres
Reverse Transfer
Capacitance
1.83
nF
QG
Gate Charge
VGE=-15﹍+15V
5.54
μC
td(on)
Turn-On Delay Time
VCC=300V,IC=550A,
RGon=1.8
Ω,
RGoff=0.75
Ω,
VGE=±15V,Tj=25
oC
96
ns
tr
Rise Time
72
ns
td(off)
Turn-Off Delay Time
432
ns
tf
Fall Time
56
ns
Eon
Turn-On Switching
Loss
7.20
mJ
Eoff
Turn-Off Switching
Loss
16.4
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=550A,
RGon=1.8
Ω,
RGoff=0.75
Ω,
VGE=±15V,Tj=125
oC
96
ns
tr
Rise Time
80
ns
td(off)
Turn-Off Delay Time
456
ns
tf
Fall Time
80
ns
Eon
Turn-On Switching
Loss
8.40
mJ
Eoff
Turn-Off Switching
Loss
19.6
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=550A,
RGon=1.8
Ω,
RGoff=0.75
Ω,
VGE=±15V,Tj=150
oC
104
ns
tr
Rise Time
80
ns
td(off)
Turn-Off Delay Time
464
ns
tf
Fall Time
88
ns
Eon
Turn-On Switching
Loss
9.20
mJ
Eoff
Turn-Off Switching
Loss
20.4
mJ
ISC
SC Data
tP
≤6μs,V
GE=15V,
Tj=150
oC,V
CC=360V,
VCEM
≤650V
4000
A



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