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GD800HTX65P4S Scheda tecnica(PDF) 4 Page - StarPower Europe AG

Il numero della parte GD800HTX65P4S
Spiegazioni elettronici  650V/800A 6 in one-package
PDF  10 Pages
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Produttore elettronici  STARPOWER [StarPower Europe AG]
Homepage  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD800HTX65P4S Scheda tecnica(HTML) 4 Page - StarPower Europe AG

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GD800HTX65P4S
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
3/27/2018
4/10
Preliminary
Diode Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF
Diode Forward
Voltage
IF=550A,VGE=0V,Tj=25
oC
1.40
1.75
V
IF=550A,VGE=0V,Tj=125
oC
1.35
IF=550A,VGE=0V,Tj=150
oC
1.30
Qr
Recovered Charge
VR=300V,IF=550A,
-di/dt=7040A/
μs,V
GE=-15V
Tj=25
oC
25.3
μC
IRM
Peak Reverse
Recovery Current
341
A
Erec
Reverse Recovery
Energy
7.20
mJ
Qr
Recovered Charge
VR=300V,IF=550A,
-di/dt=7040A/
μs,V
GE=-15V
Tj=125
oC
50.6
μC
IRM
Peak Reverse
Recovery Current
462
A
Erec
Reverse Recovery
Energy
13.8
mJ
Qr
Recovered Charge
VR=300V,IF=550A,
-di/dt=7040A
/μs,V
GE=-15V
Tj=150
oC
58.3
μC
IRM
Peak Reverse
Recovery Current
484
A
Erec
Reverse Recovery
Energy
16.0
mJ
NTC Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
k
Ω
∆R/R
Deviation of R100
TC=100
oC,R
100=493.3
Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K



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