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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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GD800HTX65P4S Scheda tecnica(PDF) 1 Page - StarPower Europe AG |
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GD800HTX65P4S Scheda tecnica(HTML) 1 Page - StarPower Europe AG |
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1 / 10 page  GD800HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 1/10 Preliminary STARPOWER SEMICONDUCTOR IGBT GD800HTX65P4S 650V/800A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Low switching losses 6 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper pinfin baseplate using DBC technology Typical Applications Hybrid and electric vehicle Inverter for motor drive Uninterruptible power supply Equivalent Circuit Schematic |
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Descrizione simile - GD800HTX65P4S |
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