VNHD7012AYTR datasheet(10/43 Pages) STMICROELECTRONICS

10 / 43 page

Electrical specifications

VNHD7012AY

10/43

DS11484 Rev 5

2.2

Thermal data

VCP

VCP DC voltage

VBATT -6 to

VBAT+14

VGATE_LSx

GATE_LAS, GATE_LSB DC voltage

VREF_OVL_LSx

VREF_OVL_LSA, VREF_OVL_LSB input current

-1 to 10

VESD

Electrostatic discharge (Human body model: R = 1.5 kΩ; C = 100 pF)

– MultiSenseVREG, VREF_OVL_LSx

–INA, INB, OUTA, OUTB, PWM, SEL0, SEL1, SENSE_EN

–GATE_LSx

Junction operating temperature

-40 to 150

°C

TSTG

Storage temperature

-55 to 150

°C

IK_SOURCE_LSx

DC reverse ground pin current (per leg)

100

1. This applies with the n-channel MOSFET used for the reverse battery protection. Otherwise VBAT has to be shorted to

VCC.

2. Based on the internal wires capability.

Note:

All logic pins cannot be left floating but they must be connected to GND if unused.

Table 4. Absolute maximum ratings (continued)

Symbol

Parameter

Value

Unit

Table 5. Thermal data

Symbol

Parameter

Max. value

Unit

Rthj-case

Thermal resistance junction-case (per leg channel)



(JEDEC JESD 51-8)

2.4

°C/W

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-5)(1)

1. Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace.

50.6

°C/W

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-7)

16.6

°C/W

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