CY27EE16ZE
Document #: 38-07440 Rev. *C
Page 13 of 17
Absolute Maximum Conditions
Parameter
Description
Min.
Max.
Unit
VDD
Supply Voltage
–0.5
7.0
V
TS
Storage Temperature
–65
125
°C
TJ
Junction Temperature
–40
100
°C
Logic Inputs
VSS – 0.5
VDD + 0.5
V
I2C interface (SDAT and SCL)
–0.5
5.5
V
Digital Outputs referred to VDD
VSS – 0.5
VDD + 0.5
V
Electro-Static Discharge
2000
V
VCXO
Analog Input
–0.5
VDD + 0.5
V
Endurance (@ 25°C)
1,000,000 (100k/page)
writes
Data retention
10
yrs
Recommended Operating Conditions
Parameter
Description
Min.
Typ.
Max.
Unit
VDD
Operating Voltage
3.135
3.3
3.465
V
VDDL
Operating Voltage
2.375
2.5, 3.3
3.465
V
TA
Ambient Temperature, Industrial grade
–40
85
°C
TA
Ambient Temperature, Commercial grade
0
70
°C
CLOAD
Max. Load Capacitance
15
pF
tPU
Power-up time for all VDD’s to reach minimum specified voltage
(power ramps must be monotonic)
0.05
500
ms
DC Electrical Specifications
Parameter
Name
Description
Min.
Typ.
Max.
Unit
IOH
Output High Current[2]
VOH = VDD – 0.5, VDD = 3.3V
12
24
mA
IOL
Output Low Current[2]
VOL = 0.5, VDD = 3.3V
12
24
mA
VIH
Input High Voltage
CMOS levels
0.7 * VDD
V
VIL
Input Low Voltage
CMOS levels
0.3 * VDD
V
CIN
Input Capacitance[2, 3]
7pF
IIZ
Input Leakage Current
Except XTAL pins
10
µA
f∆XO
VCXO Pullability Range[2]
+150
ppm
VVCXO
VCXO Input Range[2]
0VDD
V
fVBW
VCXO Input Bandwidth[2]
DC
200
kHz
IVDD
Supply Current
45
mA
ISB
Supply Current - Power
Down Mode Enabled
Current drawn while part is in
standby.
540
µA
DC Electrical Specifications – 2.5V Outputs
Parameter
Name
Description
Min.
Typ.
Max.
Unit
IOH2.5
Output High Current[2, 4]
VOH = VDD – 0.5, VDD = 3.3 V, VDDL = 2.5V
12
24
mA
IOL2.5
Output Low Current[2, 4]
VOL = 0.5, VDD = 3.3 V, VDDL=2.5V
12
24
mA
Notes:
2. Guaranteed by design, not 100% tested.
3. Crystal must meet Table 14 specifications.
4. VDD is only specified and characterized at 3.3V + 5%. VDDL may be powered at any value between 3.465 and 2.375.
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