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R7KA8M2AFDCAM Scheda tecnica(PDF) 63 Page - Renesas Technology Corp |
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R7KA8M2AFDCAM Scheda tecnica(HTML) 63 Page - Renesas Technology Corp |
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63 / 295 page ![]() Table 2.14 Current of high-speed mode, maximum data processing (MVE operation), CPU0 active, CPU1 Deep Sleep, peripheral clock ON (DCDC mode) Parameter Symbol Typ Max Unit Test conditions 95 °C 105 °C 125 °C Supply current *1*2 CPUCLK0 = 1 GHz CPUCLK1 = 250 MHz VSCR_1 ICC_DCDC*4 131 313 — — mA VCC_DCDC = 3.3 V CPU1 = Deep Sleep *5 IDD*3 335 804 — — CPUCLK0 = 800 MHz CPUCLK1 = 200 MHz VSCR_1 ICC_DCDC*4 109 — 332 — IDD*3 279 — 853 — CPUCLK0 = 600 MHz CPUCLK1 = 200 MHz VSCR_1 ICC_DCDC*4 89 — — 342 IDD*3 229 — — 879 CPUCLK0 = 600 MHz CPUCLK1 = 150 MHz VSCR_2 ICC_DCDC*4 83 258 298 328 IDD*3 216 676 780 858 Note 1. Supply current values are with all output pins unloaded and all input pull-up MOSs in the off state. Note 2. Measured with clocks supplied to the peripheral functions and peripherals being operated. This does not include the BGO operation. Note 3. IDD depends on f (CPUCLK0 and ICLK) as follows. IDD Typ. = 0.25 × fCPUCLK0 + 0.30 × fICLK + 21 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_1, 95℃) = 0.27 × fCPUCLK0 + 0.05 × fICLK + 474 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_1, 105℃) = 0.27 × fCPUCLK0 + 0.05 × fICLK + 549 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_1, 125℃) = 0.27 × fCPUCLK0 + 0.05 × fICLK + 704 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_2, 95℃) = 0.27 × fCPUCLK0 + 0.07 × fICLK + 461 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_2, 105℃) = 0.27 × fCPUCLK0 + 0.07 × fICLK + 533 (unit : mA, fCPUCLK0 and fICLK are MHz) IDD Max.(VSCR_2, 125℃) = 0.27 × fCPUCLK0 + 0.07 × fICLK + 686 (unit : mA, fCPUCLK0 and fICLK are MHz) Note 4. Typical DCDC efficiency and the voltage of the test conditions are applied. Note 5. Same frequency condition is applied as in the maximum condition. RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 63 of 295 |
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