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MPC5125 Scheda tecnica(PDF) 51 Page - Freescale Semiconductor, Inc |
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MPC5125 Scheda tecnica(HTML) 51 Page - Freescale Semiconductor, Inc |
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51 / 92 page ![]() Electrical and Thermal Characteristics MPC5125 Microcontroller Data Sheet, Rev. 3 Freescale Semiconductor 51 4.3.5.1 DDR SDRAM AC Timing Specifications 4.3.5.2 MobileDDR/LPDDR SDRAM AC Timing Specifications Table 21. DDR SDRAM Timing Specifications At recommended operating conditions with VDD_IO_MEM of ±5% Parameter Symbol Min Max Unit Notes SpecID Clock cycle time, CL = x tCK 6000 — ps A5.1 MCK AC differential crosspoint voltage VOX-AC (VDD_IO_MEM × 0.5)– 0.15 (VDD_IO_MEM × 0.5) + 0.15 V 1 NOTES: 1 Measured with clock pin loaded with differential 100 Ω termination resistor. A5.2 CK HIGH pulse width tCH 0.47 0.53 tCK 1,3 A5.3 CK LOW pulse width tCL 0.47 0.53 tCK 1,3 A5.4 Skew between MCK and DQS transitions tDQSS −0.25 0.25 tCK 2,3 2 Measured with all outputs except the clock loaded with 50 Ω termination resistor to V DD_IO_MEM/2. 3 All transitions measured at mid-supply (V DD_IO_MEM/2). A5.5 Address and control output setup time relative to MCK rising edge tOS(base) tCK/2 – 1000 — ps 2,3 A5.6 Address and control output hold time relative to MCK rising edge tOH(base) tCK/2 – 1000 — ps 2,3 A5.7 DQ and DM output setup time relative to DQS tDS1(base) tCK/4 – 750 — ps 2,3 A5.8 DQ and DM output hold time relative to DQS tDH1(base) tCK/4 – 750 — ps 2,3 A5.9 DQS-DQ skew for DQS and associated DQ inputs tDQSQ – (tCK/4 – 600) tCK/4 – 600 ps 3 A5.10 DQS window position related to CAS read command tDQSEN 2tCK + 1500 3tCK – 1000 ps 1,2,3,4, 5 4 In this window, the first rising edge of DQS should occur. From the start of the window to DQS rising edge, DQS should be low. 5 The window position is given for t DQSEN = 2.0 tCK (RDLY = 2, HALF DQS DLY = QUART DQS DLY = 0) with CL = 3 DDR SDRAM device. For other values of tDQSEN, the window position is shifted accordingly. A5.11 Table 22. MobileDDR/LPDDR SDRAM Timing Specifications At recommended operating conditions with VDD_IO_MEM of ±5% Parameter Symbol Min Max Unit Notes SpecID Clock cycle time, CL = x tCK 6000 — ps A5.1 MCK AC differential crosspoint voltage VOX-AC (VDD_IO_MEM × 0.5) – 0.1 (VDD_IO_MEM × 0.5) + 0.1 V 1 A5.2 CK HIGH pulse width tCH 0.47 0.53 tCK 1,3 A5.3 CK LOW pulse width tCL 0.47 0.53 tCK 1,3 A5.4 Skew between MCK and DQS transitions tDQSS −0.25 0.25 tCK 2,3 A5.5 Address and control output setup time relative to MCK rising edge tOS(base) tCK/2 – 1000 — ps 2,3 A5.6 |
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