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MPC5125 Scheda tecnica(PDF) 51 Page - Freescale Semiconductor, Inc

Il numero della parte MPC5125
Spiegazioni elettronici  MPC5125 Microcontroller Data Sheet
PDF  92 Pages
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Produttore elettronici  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC5125 Scheda tecnica(HTML) 51 Page - Freescale Semiconductor, Inc

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Electrical and Thermal Characteristics
MPC5125 Microcontroller Data Sheet, Rev. 3
Freescale Semiconductor
51
4.3.5.1
DDR SDRAM AC Timing Specifications
4.3.5.2
MobileDDR/LPDDR SDRAM AC Timing Specifications
Table 21. DDR SDRAM Timing Specifications
At recommended operating conditions with VDD_IO_MEM of ±5%
Parameter
Symbol
Min
Max
Unit Notes SpecID
Clock cycle time, CL = x
tCK
6000
ps
A5.1
MCK AC differential crosspoint voltage
VOX-AC (VDD_IO_MEM × 0.5)– 0.15 (VDD_IO_MEM × 0.5) + 0.15
V
1
NOTES:
1 Measured with clock pin loaded with differential 100
Ω termination resistor.
A5.2
CK HIGH pulse width
tCH
0.47
0.53
tCK
1,3
A5.3
CK LOW pulse width
tCL
0.47
0.53
tCK
1,3
A5.4
Skew between MCK and DQS transitions
tDQSS
−0.25
0.25
tCK
2,3
2 Measured with all outputs except the clock loaded with 50
Ω termination resistor to V
DD_IO_MEM/2.
3 All transitions measured at mid-supply (V
DD_IO_MEM/2).
A5.5
Address and control output setup time
relative to MCK rising edge
tOS(base)
tCK/2 – 1000
ps
2,3
A5.6
Address and control output hold time
relative to MCK rising edge
tOH(base)
tCK/2 – 1000
ps
2,3
A5.7
DQ and DM output setup time relative to
DQS
tDS1(base)
tCK/4 – 750
ps
2,3
A5.8
DQ and DM output hold time relative to
DQS
tDH1(base)
tCK/4 – 750
ps
2,3
A5.9
DQS-DQ skew for DQS and associated
DQ inputs
tDQSQ
– (tCK/4 – 600)
tCK/4 – 600
ps
3
A5.10
DQS window position related to CAS read
command
tDQSEN
2tCK + 1500
3tCK – 1000
ps 1,2,3,4,
5
4 In this window, the first rising edge of DQS should occur. From the start of the window to DQS rising edge, DQS should be low.
5 The window position is given for t
DQSEN = 2.0 tCK (RDLY = 2, HALF DQS DLY = QUART DQS DLY = 0) with CL = 3 DDR
SDRAM device. For other values of tDQSEN, the window position is shifted accordingly.
A5.11
Table 22. MobileDDR/LPDDR SDRAM Timing Specifications
At recommended operating conditions with VDD_IO_MEM of ±5%
Parameter
Symbol
Min
Max
Unit Notes SpecID
Clock cycle time, CL = x
tCK
6000
ps
A5.1
MCK AC differential crosspoint voltage
VOX-AC (VDD_IO_MEM × 0.5) – 0.1 (VDD_IO_MEM × 0.5) + 0.1
V
1
A5.2
CK HIGH pulse width
tCH
0.47
0.53
tCK
1,3
A5.3
CK LOW pulse width
tCL
0.47
0.53
tCK
1,3
A5.4
Skew between MCK and DQS
transitions
tDQSS
−0.25
0.25
tCK
2,3
A5.5
Address and control output setup time
relative to MCK rising edge
tOS(base)
tCK/2 – 1000
ps
2,3
A5.6



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