INA149-EP

SBOS608A – MARCH 2012 – REVISED APRIL 2012

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERABLE PART

PACKAGE

PACKAGE MARKING

VID NUMBER

NUMBER

-55°C to 125°C

SOIC-8 - D

INA149AMDREP

INA149AM

V62/12614-01XE

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

INA149

UNIT

Supply voltage

(V+) – (V–)

40

V

Input voltage range

Continuous

300

V

Common-mode and differential, 10 s

500

V

(V–) – 0.3 to (V+) + 0.3

V

10

mA

Output short-circuit current duration

Indefinite

Operating temperature range

–55 to +125

°C

Storage temperature range

–65 to +150

°C

Junction temperature

+150

°C

Human body model (HBM)

1500

V

ESD rating

Charged device model (CDM)

1000

V

Machine model (MM)

100

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

supply rails should be limited to 10 mA or less.

2

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Product Folder Link(s): INA149-EP