INA149AMDREP datasheet(4/26 Pages) TI1

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INA149-EP

SBOS608A – MARCH 2012 – REVISED APRIL 2012

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ELECTRICAL CHARACTERISTICS: V+ = +15 V and V– = –15 V

At TA = +25°C, RL = 2 kΩ connected to ground, and VCM = REFA = REFB = GND, unless otherwise noted.

INA149

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAIN

Initial

VOUT = ±10.0 V,

V/V

Gain error

VOUT = ±10.0 V, TA = –55°C to +125°C

±0.005

±0.047

%FSR

Gain

vs temperature, TA = –55°C to +125°C

±1.5

ppm/°C

Nonlinearity

±0.0005

±0.001

%FSR

OFFSET VOLTAGE

TA = –55°C to +125°C

350

3500

µV

vs temperature, TA = –55°C to +125°C

2.5

µV/°C

Initial offset

vs supply (PSRR), VS = ±2 V to ±18 V, TA = –55°C

120

to +125°C

INPUT

Differential

800

Impedance

Common-mode

200

Differential

–13.5

13.5

Voltage range

Common-mode

–275

275

At dc, VCM = ±275 V, TA = –55°C to +125°C

Common-mode rejection

At ac, 500 Hz, VCM = 500 VPP

(CMRR)

At ac, 1 kHz, VCM = 500 VPP

OUTPUT

Voltage range

TA = –55°C to +125°C

–13.5

13.5

Short-circuit current

±25

Capacitive load drive

No sustained oscillations

OUTPUT NOISE VOLTAGE

0.01 Hz to 10 Hz

µVPP

10 kHz

550

nV/

√Hz

DYNAMIC RESPONSE

Small-signal bandwidth

500

kHz

Slew rate

VOUT = ±10-V step, TA = –55°C to +125°C

1.7

V/µs

Full-power bandwidth

VOUT = 20 VPP

kHz

Settling time

0.01%, VOUT = 10-V step

µs

POWER SUPPLY

Voltage range

±2

±18

VS = ±18 V, VOUT = 0 V

810

950

µA

Quiescent current

vs temperature, TA = –55°C to +125°C

0.95

1.1

TEMPERATURE RANGE

Specified

–55

+125

°C

Operating

–55

+125

°C

Storage

–65

+150

°C

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