INA149AMDREP datasheet(5/26 Pages) TI1

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INA149-EP

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SBOS608A – MARCH 2012 – REVISED APRIL 2012

ELECTRICAL CHARACTERISTICS: V+ = 5 V and V– = 0 V

At TA = +25°C, RL = 2 kΩ connected to 2.5 V, and VCM= REFA = REFB = 2.5 V, unless otherwise noted.

INA149

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAIN

Initial

VOUT = 1.5 V to 3.5 V

V/V

Gain error

VOUT = 1.5 V to 3.5 V

±0.005

%FSR

Gain

vs temperature, TA = –55°C to +125°C

±1.5

ppm/°C

Nonlinearity

±0.0005

%FSR

OFFSET VOLTAGE

350

µV

Initial offset

vs temperature, TA = –55°C to +125°C

µV/°C

vs supply (PSRR), VS = 4 V to 5 V

120

INPUT

Differential

800

Impedance

Common-mode

200

Common-mode

–20

At dc, VCM = –20 V to 25 V

100

vs temperature, TA = –55°C to +125°C, at dc

100

Common-mode rejection

At ac, 500 Hz, VCM = 49 VPP

100

At ac, 1 kHz, VCM = 49 VPP

OUTPUT

Voltage range

1.7

3.4

Short-circuit current

±15

Capacitive load drive

No sustained oscillations

OUTPUT NOISE VOLTAGE

0.01 Hz to 10 Hz

µVPP

10 kHz

550

nV/

√Hz

DYNAMIC RESPONSE

Small-signal bandwidth

500

kHz

Slew rate

VOUT = 2 VPP step

V/µs

Full-power bandwidth

VOUT = 2 VPP

kHz

Settling time

0.01%, VOUT = 2 VPP step

µs

POWER SUPPLY

Voltage range

VS = 5 V

810

µA

Quiescent current

vs temperature, TA = –55°C to +125°C

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