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28F016SA Scheda tecnica(PDF) 42 Page - Intel Corporation

Il numero della parte 28F016SA
Spiegazioni elettronici  28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
PDF  55 Pages
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Produttore elettronici  INTEL [Intel Corporation]
Homepage  http://www.intel.com
Logo INTEL - Intel Corporation

28F016SA Scheda tecnica(HTML) 42 Page - Intel Corporation

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28F016SA
E
42
5.9
AC Characteristics for CE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1)
VCC = 3.3V ±10%, TA = 0
°C to +70°C, -40°C to +85°C
Temp
Commercial
Comm/Ext
Sym
Parameter
Speed
-120
-150
Unit
Notes
Min
Typ
Max
Min
Typ
Max
tAVAV
Write Cycle Time
120
150
ns
tVPEH
VPP Setup to CE# Going High
3
100
100
ns
tPHWL
RP# Setup to WE# Going Low
480
480
ns
tWLEL
WE# Setup to CE# Going Low
0
0
ns
tAVEH
Address Setup to CE# Going
High
2,6
75
75
ns
tDVEH
Data Setup to CE# Going High
2,6
75
75
ns
tELEH
CE# Pulse Width
75
75
ns
tEHDX
Data Hold from CE# High
2
10
10
ns
tEHAX
Address Hold from CE# High
2
10
10
ns
tEHWH
WE Hold from CE# High
10
10
ns
tEHEL
CE# Pulse Width High
45
75
ns
tGHEL
Read Recovery before Write
0
0
ns
tEHRL
CE# High to RY/BY# Going Low
100
100
ns
tRHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
30
0
ns
tPHEL
RP# High Recovery to CE#
Going Low
11
µs
tEHGL
Write Recovery before Read
95
120
ns
tQVVL
VPP Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
00
µs
tEHQV1
Duration of Word/Byte Program
Operation
4,5
5
9
Note
7
5
9
Note
7
µs
tEHQV2
Duration of Block Erase
Operation
4
0.3
10
0.3
10
sec



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