AN4671

How to minimize switching losses

DocID027654 Rev 1

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Figure 2: SiC MOSFET dynamic characterization test circuit

2.1

As with any majority carrier device, SiC MOSFETs have no tail, so the turn-off switching

during the voltage rise time and the current fall time.

Turn-off losses inherently depend on the device itself (as opposed to turn-on switching

losses, which can depend on the reverse recovery charge of an external silicon or SiC

diode, as in BOOST converters and many other topologies), hence the unrivaled turn-off

speed of the SiC MOSFET is a feature of this new technology that separates it from other

1200 V power actuators.

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using a negative bias gate voltage during off time