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R5F572TFGDFP Scheda tecnica(PDF) 169 Page - Renesas Technology Corp

Il numero della parte R5F572TFGDFP
Spiegazioni elettronici  Maximum operating frequency: 200 MHz Capable of 1160 CoreMark in operation at 200 MHz
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R01DS0331EJ0100 Rev.1.00
Page 169 of 176
Feb 08, 2019
RX72T Group
5. Electrical Characteristics
5.13
Flash Memory Characteristics
Note 1. Definition of program/erase cycle:
The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block
can be erased n times. For instance, when 256-byte program is performed 32 times for different addresses in 8-Kbyte block and
then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more
than once before the next erase cycle (overwriting is prohibited).
Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to
guarantee all characteristics listed in this table.
Note 3. This shows the characteristic when the program/erase cycle does not exceed the specified value.
Table 5.51
Code Flash Memory Characteristics
Conditions: VCC = 2.7 to 5.5 V, VCC_USB = 2.7 to 5.5 V, AVCC0 = AVCC1 = AVCC2 = 3.0 to 5.5V,
VSS = VSS_USB = AVSS0 = AVSS1 = AVSS2 = 0 V,
Temperature range for program/erase: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 60 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Program time
(NPEC ≤ 100 cycles)
256 bytes
tP256
—
0.9
13.2
—
0.4
6
ms
8 Kbytes
tP8K
—29
176
—13
80
32 Kbytes
tP32K
—
116
704
—
52
320
Program time
(NPEC > 100 cycles)
256 bytes
tP256
—
1.1
15.8
—
0.5
7.2
8 Kbytes
tP8K
—35
212
—16
96
32 Kbytes
tP32K
—
140
848
—
64
384
Erase time
(NPEC ≤ 100 cycles)
8 Kbytes
tE8K
—
71
216
—
39
120
32 Kbytes
tE32K
—
254
864
—
141
480
Erase time
(NPEC > 100 cycles)
8 Kbytes
tE8K
—
85
260
—
47
144
32 Kbytes
tE32K
—
304
1040
—
169
576
Program/erase cycles*1
NPEC
1000*2
—
—
1000*2
——
Cycles
Program suspend latency
tSPD
—
—
264
—
—
120
μs
Primary erase suspend latency in suspend
priority mode
tSESD1
—
—
216
—
—
120
Secondary erase suspend latency in
suspend priority mode
tSESD2
——
1.7
——
1.7
ms
Erase suspend latency in erase priority
mode
tSEED
——
1.7
——
1.7
Forced stop command
tFD
——
32
——
20
μs
Data retention*3
tDRP
10
—
—
10
—
—
Year



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