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GD800HTX75P4S Scheda tecnica(PDF) 3 Page - StarPower Europe AG

Il numero della parte GD800HTX75P4S
Spiegazioni elettronici  750V/800A 6 in one-package
PDF  10 Pages
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Produttore elettronici  STARPOWER [StarPower Europe AG]
Homepage  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD800HTX75P4S Scheda tecnica(HTML) 3 Page - StarPower Europe AG

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GD800HTX75P4S
IGBT Module
©2020 STARPOWER Semiconductor Ltd.
12/10/2020
3/10
Preliminary
IGBT Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=550A,VGE=15V,
Tj=25
oC
1.25
1.55
V
IC=550A,VGE=15V,
Tj=125
oC
1.35
IC=550A,VGE=15V,
Tj=150
oC
1.40
VGE(th)
Gate-Emitter Threshold
Voltage
IC=12.80mA,VCE=VGE,
Tj=25
oC
5.1
5.8
6.5
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0.5
Ω
Cies
Input Capacitance
VCE=25V,f=100kHz,
VGE=0V
56.4
nF
Cres
Reverse Transfer
Capacitance
2.08
nF
QG
Gate Charge
VGE=-15﹍+15V
5.28
μC
td(on)
Turn-On Delay Time
VCC=400V,IC=550A,
RG=1.5Ω,VGE=±15V,
Tj=25
oC
97
ns
tr
Rise Time
77
ns
td(off)
Turn-Off Delay Time
390
ns
tf
Fall Time
78
ns
Eon
Turn-On Switching
Loss
10.7
mJ
Eoff
Turn-Off Switching
Loss
23.2
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=550A,
RG=1.5Ω,VGE=±15V,
Tj=150
oC
110
ns
tr
Rise Time
87
ns
td(off)
Turn-Off Delay Time
435
ns
tf
Fall Time
136
ns
Eon
Turn-On Switching
Loss
16.5
mJ
Eoff
Turn-Off Switching
Loss
30.0
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=550A,
RG=1.5Ω,VGE=±15V,
Tj=175
oC
114
ns
tr
Rise Time
87
ns
td(off)
Turn-Off Delay Time
445
ns
tf
Fall Time
148
ns
Eon
Turn-On Switching
Loss
18.5
mJ
Eoff
Turn-Off Switching
Loss
32.5
mJ
ISC
SC Data
tP≤6μs,VGE=15V,
Tj=175
oC,VCC=450V,
VCEM≤750V
TBD
A



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