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GD800HTX75P4S Scheda tecnica(PDF) 7 Page - StarPower Europe AG |
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GD800HTX75P4S Scheda tecnica(HTML) 7 Page - StarPower Europe AG |
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7 / 10 page ![]() GD800HTX75P4S IGBT Module ©2020 STARPOWER Semiconductor Ltd. 12/10/2020 7/10 Preliminary Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF 0 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 500 600 700 800 V CE [V] Module R G=1.5Ω V GE=±15V T j=150 oC 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 t [s] IGBT i: 1 2 3 4 5 r i[K/W]: 0.0062 0.0220 0.0238 0.0380 0.0100 τ i[s]: 0.0005 0.0200 0.0580 0.4500 2.1900 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1 1.5 2 2.5 V F [V] Tj=25℃ Tj=125℃ Tj=150℃ 0 5 10 15 20 0 200 400 600 800 I F [A] Erec Tj=150℃ Erec Tj=175℃ V CC=400V R G=1.5Ω V GE=-15V |
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