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GD800HTX75P4S Scheda tecnica(PDF) 5 Page - StarPower Europe AG |
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GD800HTX75P4S Scheda tecnica(HTML) 5 Page - StarPower Europe AG |
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5 / 10 page ![]() GD800HTX75P4S IGBT Module ©2020 STARPOWER Semiconductor Ltd. 12/10/2020 5/10 Preliminary Module Characteristics T F=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit △p Pressure Drop Cooling Circuit △V/△t=10.0dm 3/min;TF=25oC;Cooling Fluid=50% Water/50% Ethylene Glycol 100 mbar p Maximum Pressure In Cooling Circuit 2.5 bar LCE Stray Inductance 14 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.80 mΩ RthJF Junction-to-Cooling Fluid (per IGBT) Junction-to-Cooling Fluid (per Diode) 0.100 0.130 K/W M Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 2.5 3.0 5.0 6.0 N.m G Weight of Module 1250 g |
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