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GD800HTX75P4S Scheda tecnica(PDF) 1 Page - StarPower Europe AG |
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GD800HTX75P4S Scheda tecnica(HTML) 1 Page - StarPower Europe AG |
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1 / 10 page ![]() GD800HTX75P4S IGBT Module ©2020 STARPOWER Semiconductor Ltd. 12/10/2020 1/10 Preliminary STARPOWER SEMICONDUCTOR IGBT GD800HTX75P4S 750V/800A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Low switching losses 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper pinfin baseplate using DBC technology Typical Applications Hybrid and electric vehicle Inverter for motor drive Uninterruptible power supply Equivalent Circuit Schematic |
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