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GD800HTX75P4S Scheda tecnica(PDF) 8 Page - StarPower Europe AG |
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GD800HTX75P4S Scheda tecnica(HTML) 8 Page - StarPower Europe AG |
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8 / 10 page ![]() GD800HTX75P4S IGBT Module ©2020 STARPOWER Semiconductor Ltd. 12/10/2020 8/10 Preliminary Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance Fig 11. NTC Temperature Characteristic 0 5 10 15 20 25 0 3 6 9 12 15 R G [Ω] Erec Tj=150℃ Erec Tj=175℃ V CC=400V I F=550A V GE=-15V 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 t [s] Diode i: 1 2 3 4 5 r i[K/W]: 0.0081 0.0286 0.0310 0.0495 0.0130 τ i[s]: 0.0005 0.0200 0.0580 0.4500 2.1900 0.1 1 10 100 0 30 60 90 120 150 T C [ oC] |
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