AD8009

–4–

REV. F

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD8009 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W

Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . .

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .

±3.5 V

Output Short-Circuit Duration

. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves

Storage Temperature Range R Package . . . . –65

°C to +125°C

Operating Temperature Range (A Grade) . . . –40

°C to +85°C

Operating Temperature Range (J Grade) . . . . . . . 0

°C to 70°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300

°C

NOTES

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

8-Lead SOIC Package:

θ

°C/W.

5-Lead SOT-23 Package:

θ

°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8009

is limited by the associated rise in junction temperature. The maxi-

mum safe junction temperature for plastic encapsulated devices

is determined by the glass transition temperature of the plastic,

approximately 150

°C. Exceeding this limit temporarily may cause

a shift in parametric performance due to a change in the stresses

exerted on the die by the package. Exceeding a junction tempera-

ture of 175

°C for an extended period can result in device failure.

While the AD8009 is internally short circuit protected, this may

not be sufficient to guarantee that the maximum junction tempera-

ture (150

°C) is not exceeded under all conditions. To ensure

proper operation, it is necessary to observe the maximum power

derating curves.

AMBIENT TEMPERATURE ( C)

90

80

2.0

1.0

0

1.5

0.5

–50

70

60

50

40

30

20

10

0

–40 –30 –20 –10

8-LEAD SOIC PACKAGE

5-LEAD SOT-23 PACKAGE

Figure 3. Plot of Maximum Power Dissipation vs.

Temperature

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

Branding

AD8009AR

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009AR-REEL

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009AR-REEL7

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009ARZ

*

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009ARZ-REEL

*

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009ARZ-REEL7

*

–40

°C to +85°C

8-Lead SOIC

R-8

AD8009JRT-R2

0

°C to 70°C

5-Lead SOT-23

RT-5

HKJ

AD8009JRT-REEL

0

°C to 70°C

5-Lead SOT-23

RT-5

HKJ

AD8009JRT-REEL7

0

°C to 70°C

5-Lead SOT-23

RT-5

HKJ

AD8009JRTZ-REEL

*

0

°C to 70°C

5-Lead SOT-23

RT-5

HKJ

AD8009JRTZ-REEL7

*

0

°C to 70°C

5-Lead SOT-23

RT-5

HKJ

AD8009ACHIPS

Die

*Z = Pb-free part.