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DIO7S104LP12 Scheda tecnica(PDF) 20 Page - DIOO MICROCIRCUITS CO., LTD |
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DIO7S104LP12 Scheda tecnica(HTML) 20 Page - DIOO MICROCIRCUITS CO., LTD |
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20 / 27 page ![]() DIO7S104 Version 1.5, Dec 2025 www.dioo.com © 2025 Dioo Microcircuits Co., Ltd. Jiangsu 17 10.Function Description 10.1. Power up and power down sequence The DIO7S104 has an output enable pin which control the output status. When the OE input is low, all I/Os are placed in the high-impedance state. To ensure the high-impedance state during power up or power down, OE should be connected to GND via a pull-down resistor. Pins of A port and OE are referenced to VCCA and pins of B port are referenced to VCCB. Figure 7. Power up and power down sequence, tup / tdown ≥ 100 μs 10.2. Architecture The DIO7S104 architecture (See Figure 8) does not require a direction-control signal to regulate the direction of data flow from A to B or from B to A. The output drivers of the device maintain high or low, but are designed to be weak, in a DC state. As a result, when data on the bus flows to the opposite direction, an external driver can overdrive the output drivers. The output one-shots on the A or B ports detect rising or falling edges. During a rising edge, the one-shot turns on the PMOS transistors (T1, T2) for a short duration, which speeds up the low-to-high transition. During a falling edge, the one-shot turns on the NMOS transistors (T3, T4) for a short duration, which speeds up the high-to-low transition. 70 Ω at VCCO = 1.2 V to 1.8 V, 50 Ω at VCCO = 1.8 V to 3.3 V, and 40 Ω at VCCO = 3.3 V to 5 V is the normal output impedance during output transition. Figure 8. Architecture of DIO7S104 device I/O cell |
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