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DIO7S104LP12 Scheda tecnica(PDF) 8 Page - DIOO MICROCIRCUITS CO., LTD |
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DIO7S104LP12 Scheda tecnica(HTML) 8 Page - DIOO MICROCIRCUITS CO., LTD |
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8 / 27 page ![]() DIO7S104 Version 1.5, Dec 2025 www.dioo.com © 2025 Dioo Microcircuits Co., Ltd. Jiangsu 5 IOZ Leakage current at each A or B port OE = GND, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 0.1 1 μA OE = GND, TA = -40 ~ 85°C 1.08 V to 3.6 V 1.65 V to 5.5 V 0.5 4 μA ICCA Supply current VI = VCCI or GND, IO = 0, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 0.02 7 μA ICCB Supply current VI = VCCI or GND, IO = 0, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 1 14 μA ICCA + ICCB VI = VCCI or GND, IO = 0, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 1 21 μA ICCZA Leakage of supply current VI = VCCI or GND, IO = 0, OE = GND, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 0.02 7 μA ICCZB Leakage of supply current VI = VCCI or GND, IO = 0, OE = GND, TA = 25°C 1.08 V to 3.6 V 1.65 V to 5.5 V 1 14 μA CI Input capacitance OE 1.08 V to 3.6 V 1.65 V to 5.5 V 4 pF Cio Input-to-output internal capacitance A port 1.08 V to 3.6 V 1.65 V to 5.5 V 7 pF B port 1.08 V to 3.6 V 1.65 V to 5.5 V 7 pF tW(1) Data rate TA = 25°C, Data inputs, Push-pull driving 1.2 ± 0.12 V 1.8 V 20 Mbps 2.5 V 20 Mbps 3.3 V 20 Mbps 5 V 20 Mbps Pulse duration 1.8 V 50 ns 2.5 V 50 ns 3.3 V 50 ns 5 V 50 ns Data rate TA = 25°C, Data inputs, Open-drain driving 1.2 ± 0.12 V 1.8 V to 5 V 2 Mbps Pulse duration 1.8 V to 5 V 500 ns Data rate TA = -40 ~ 85°C, Data inputs, Push-pull driving 1.5 ± 0.1 V 1.8 ± 0.15 V 40 Mbps 2.5 ± 0.2 V 40 Mbps 3.3 ± 0.3 V 40 Mbps 5 ± 0.5 V 40 Mbps Pulse duration 1.8 ± 0.15 V 25 ns 2.5 ± 0.2 V 25 ns 3.3 ± 0.3 V 25 ns 5 ± 0.5 V 25 ns Data rate TA = -40 ~ 85°C, Data inputs, Open-drain driving 1.5 ± 0.1 V 1.8 V to 5 V 2 Mbps Pulse duration 1.8 V to 5 V 500 ns |
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