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D at aS he e t
100
MB9D560_DS708-00001-3v0-E, May 15, 2015
CONFIDENTIAL
13.7 Flash Memory
Parameter
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
-
200
800
ms
8K Byte sector*1
Excluding internal preprogramming time
-
300
1100
ms
8K Byte sector *1
Including internal preprogramming time
-
400
2000
ms
64K Byte sector *1
Excluding internal preprogramming time
-
700
3700
ms
64K Byte sector *1
Including internal preprogramming time
8bit writing time
-
9
288
µ
s
Excluding overhead time at system level*1
16bit writing time
-
12
384
µ
s
Excluding overhead time at system level*1
ECC writing time
-
9
288
µ
s
Excluding overhead time at system level*1
Erase cycle *2/
Data retention time
1,000 times /20 years,
10,000 times /10 years,
100,000 times / 5 years
-
-
-
Temperature at writing/erasing
Average temperature TA=+85°C*3
*1: The guaranteed value for erase up to 100,000 cycles
*2: Number of erase cycles for each sector
*3: This value comes from the technology qualification (using Arrhenius equation to translate high
temperature measurements into normalized value at + 85°C).
Notes:
While the Flash memory is written or erased, shutdown of the external power supply (VCC, VDD) is
prohibited.
In the application system where VCC or VDD might disappear while writing, be sure to turn the power
off by using an external low-voltage detector and NMIX pin + RSTX pin for reset input at same time.
Concretely, please execute two of the following.
1. After simultaneous input from the NMIX and RSTX pins while VDD is within the recommended
operating range, maintain VDD within the recommended operating range for at least 60 µs.
2. After simultaneous input from the NMIX and RSTX pins while VCC is within the recommended
operating range, power off VCC in observance of the standard regarding the supply voltage
fluctuation rate of the external low-voltage detector.



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