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MB9DF565MLE Scheda tecnica(PDF) 101 Page - SPANSION |
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MB9DF565MLE Scheda tecnica(HTML) 101 Page - SPANSION |
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101 / 109 page ![]() D at aS he e t 100 MB9D560_DS708-00001-3v0-E, May 15, 2015 CONFIDENTIAL 13.7 Flash Memory Parameter Value Unit Remarks Min Typ Max Sector erase time - 200 800 ms 8K Byte sector*1 Excluding internal preprogramming time - 300 1100 ms 8K Byte sector *1 Including internal preprogramming time - 400 2000 ms 64K Byte sector *1 Excluding internal preprogramming time - 700 3700 ms 64K Byte sector *1 Including internal preprogramming time 8bit writing time - 9 288 µ s Excluding overhead time at system level*1 16bit writing time - 12 384 µ s Excluding overhead time at system level*1 ECC writing time - 9 288 µ s Excluding overhead time at system level*1 Erase cycle *2/ Data retention time 1,000 times /20 years, 10,000 times /10 years, 100,000 times / 5 years - - - Temperature at writing/erasing Average temperature TA=+85°C*3 *1: The guaranteed value for erase up to 100,000 cycles *2: Number of erase cycles for each sector *3: This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into normalized value at + 85°C). Notes: − While the Flash memory is written or erased, shutdown of the external power supply (VCC, VDD) is prohibited. − In the application system where VCC or VDD might disappear while writing, be sure to turn the power off by using an external low-voltage detector and NMIX pin + RSTX pin for reset input at same time. Concretely, please execute two of the following. 1. After simultaneous input from the NMIX and RSTX pins while VDD is within the recommended operating range, maintain VDD within the recommended operating range for at least 60 µs. 2. After simultaneous input from the NMIX and RSTX pins while VCC is within the recommended operating range, power off VCC in observance of the standard regarding the supply voltage fluctuation rate of the external low-voltage detector. |
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