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JS28F256P30T85 Scheda tecnica(PDF) 45 Page - Intel Corporation

Il numero della parte JS28F256P30T85
Spiegazioni elettronici  Intel StrataFlash Embedded Memory
PDF  102 Pages
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Produttore elettronici  INTEL [Intel Corporation]
Homepage  http://www.intel.com
Logo INTEL - Intel Corporation

JS28F256P30T85 Scheda tecnica(HTML) 45 Page - Intel Corporation

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1-Gbit P30 Family
Datasheet
Intel StrataFlash® Embedded Memory (P30)
April 2005
Order Number: 306666, Revision: 001
45
7.5
Program and Erase Characteristics
Num
Symbol
Parameter
VPPL
VPPH
Units Notes
Min
Typ
Max
Min
Typ
Max
Conventional Word Programming
W200 tPROG/W
Program
Time
Single word
-
90
200
-
85
190
µs
1
Single cell
-
30
60
-
30
60
Buffered Programming
W200 tPROG/W
Program
Time
Single word
-
90
200
-
85
190
µs
1
W251 tBUFF
32-word buffer
-
440
880
-
340
680
Buffered Enhanced Factory Programming
W451 tBEFP/W
Program
Single word
n/a
n/a
n/a
-
10
-
µs
1,2
W452
tBEFP/
Setup
BEFP Setup
n/a
n/a
n/a
5
-
-
1
Erasing and Suspending
W500 tERS/PB
Erase Time
32-KByte Parameter
-
0.4
2.5
-
0.4
2.5
s
1
W501 tERS/MB
128-KByte Main
-
1.2
4.0
-
1.0
4.0
W600 tSUSP/P
Suspend
Latency
Program suspend
-
20
25
-
20
25
µs
W601 tSUSP/E
Erase suspend
-
20
25
-
20
25
Notes:
1.
Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all
speed versions. Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.



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