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LPC2888 Scheda tecnica(PDF) 16 Page - NXP Semiconductors |
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LPC2888 Scheda tecnica(HTML) 16 Page - NXP Semiconductors |
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16 / 34 page ![]() LPC2880_LPC2888_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Preliminary data sheet Rev. 01 — 22 June 2006 16 of 34 Philips Semiconductors LPC2880; LPC2888 16/32-bit ARM microcontrollers with external memory interface Programming the flash in a running application is accomplished via a register interface on the APB bus. The flash module can generate an interrupt request when burning or erasing is completed. The flash memory contains a buffer to allow for faster execution. Information is read from the flash 128 bits at a time. The buffer holds this entire amount, which can represent four 32-bit ARM instructions. These captured instructions can them be executed without flash read delays, improving system performance. 6.4.1 Features • Flash access for processor execution and data read is via the AHB bus. • Flash programming in a running application is via an APB register interface. • Initial programming or reprogramming is can be accomplished from the USB port. 6.5 External memory controller The LPC2880/LPC2888 External Memory Controller (EMC) is a multi-port memory controller that supports asynchronous static memory devices such as RAM, ROM and flash, as well as dynamic memories such as Single Data Rate SDRAM. It complies with ARM’s AMBA. 6.5.1 Features • Dynamic memory interface support including Single Data Rate SDRAM. • Asynchronous static memory device support including RAM, ROM, and flash, with or without asynchronous page mode. • Low transaction latency. • Read and write buffers to reduce latency and to improve performance. • 8-bit and 16-bit static memory support. • 16-bit SDRAM memory support. • Static memory features include: – Asynchronous page mode read. – Programmable wait states. – Bus turnaround delay. – Output enable, and write enable delays. – Extended wait. – 2 MB address range with three chip selects. • One chip select for synchronous memory and three chip selects for static memory devices. • Power-saving modes dynamically control CKE and CLKOUT to SDRAMs. • Dynamic memory self-refresh mode controlled by software. • Controller supports 2 k, 4 k, and 8 k row address synchronous memory parts. That is typically 512 MB, 256 MB, and 128 MB parts, with 4, 8, or 16 data lines per device. Note: Synchronous static memory devices (synchronous burst mode) are not supported. |
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