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MB95F118MS Scheda tecnica(PDF) 34 Page - fujitsu semiconductor |
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MB95F118MS Scheda tecnica(HTML) 34 Page - fujitsu semiconductor |
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34 / 64 page ![]() MB95110M Series 34 3. DC Characteristics (Vcc = AVcc = 5.0 V ± 10%, AVss = Vss = 0.0 V, TA = − 40 °C to + 85 °C) (Continued) Parameter Sym- bol Pin name Conditions Value Unit Remarks Min Typ Max “H” level output voltage VOH1 Output pin other than P00 to P07 IOH = − 4.0 mA VCC − 0.5 ⎯⎯ V VOH2 P00 to P07 IOH = − 8.0 mA VCC − 0.5 ⎯⎯ V “L” level output voltage VOL1 Output pin other than P00 to P07 IOL = 4.0 mA ⎯⎯ 0.4 V VOL2 P00 to P07 IOL = 12 mA ⎯⎯ 0.4 V Open-drain out- put application voltage VD P50, P51 ⎯ Vss − 0.3 ⎯ Vss + 5.5 V Input leakage current (Hi-Z output leakage current) ILI Port other than P50, P51 0.0 V < VI < Vcc − 5 ⎯ + 5 µA When the pull-up prohibition setting Open-drain output leakage current ILIOD P50, P51 0.0 V < VI < Vss + 5.5 V ⎯⎯ 5 µA Pull-up resistor RPULL P10 to P15, P20 to P24, P30 to P37, PG1*1, PG2*1 VI = 0.0 V 25 50 100 k Ω When the pull-up permission setting Pull-down resistor RMOD MOD VI = Vcc 25 50 100 k Ω MASK ROM product Power supply current*2 ICC Vcc (External clock operation) VCC = 5.5 V FCH = 20 MHz FMP = 10 MHz Main clock mode (divided by 2) ⎯ 9.5 12.5 mA Flash memory product (at other than Flash memory writing and erasing) ⎯ 30 35 mA Flash memory product (at Flash memory writing and erasing) ⎯ 7.2 9.5 mA MASK ROM product VCC = 5.5 V FCH = 32 MHz FMP = 16 MHz Main clock mode (divided by 2) ⎯ 15.2 20.0 mA Flash memory product (at other than Flash memory writing and erasing) ⎯ 35.7 42.5 mA Flash memory product (at Flash memory writing and erasing) ⎯ 11.6 15.2 mA MASK ROM product |
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