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DCL540C01 Scheda tecnica(PDF) 7 Page - Toshiba Semiconductor |
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DCL540C01 Scheda tecnica(HTML) 7 Page - Toshiba Semiconductor |
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7 / 31 page ![]() DCL540x01,DCL541x01 7 2023-04-27 Rev.1.3 © 2021-2023 Toshiba Electronic Devices & Storage Corporation 7. Absolute Maximum Ratings (Ta = 25 °C) PARAMETER SYMBOL MIN MAX UNIT Power supply voltage VDD1, VDD2 -0.5 6.0 V Input Voltage VI -0.5 VDDX+0.5(1) V Output Voltage VO -0.5 VDDX+0.5(1) V Output Current IO -15 15 mA Storage Temperature Tstg -65 150 °C Operating Temperature Topr -40 110 °C Soldering Temperature (10 s) Tsol - 260 °C Maximum Withstanding Isolation Voltage (1 min.) BVS 5000 - Vrms Note(1): Maximum voltage must not exceed 6 V. X = 1 or 2. 8. Recommended Operating Conditions (Note) PARAMETER SYMBOL MIN MAX UNIT Power supply voltage VDD1, VDD2 2.25 5.5 V Junction Temperature TJ -40 150 °C Ambient Temperature Ta -40 110 °C Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note: A ceramic capacitor (0.1 μF) should be connected between pin 1 (VDD1) and pin 2 (GND1) for VDD1 and between pin 16 (VDD2) and pin 15 (GND2) for VDD2, and should be the layout on the IC as close as possible (less than 10 mm). Otherwise, the IC may not switch properly. |
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