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DSPIC30F2012AT20E/ML Scheda tecnica(PDF) 55 Page - Microchip Technology |
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DSPIC30F2012AT20E/ML Scheda tecnica(HTML) 55 Page - Microchip Technology |
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55 / 205 page ![]() © 2006 Microchip Technology Inc. DS70139E-page 53 dsPIC30F2011/2012/3012/3013 6.0 DATA EEPROM MEMORY The data EEPROM memory is readable and writable during normal operation over the entire VDD range. The data EEPROM memory is directly mapped in the program memory address space. The four SFRs used to read and write the program Flash memory are used to access data EEPROM memory, as well. As described in Section 5.5 “Control Registers”, these registers are: •NVMCON • NVMADR • NVMADRU • NVMKEY The EEPROM data memory allows read and write of single words and 16-word blocks. When interfacing to data memory, NVMADR, in conjunction with the NVMADRU register, are used to address the EEPROM location being accessed. TBLRDL and TBLWTL instructions are used to read and write data EEPROM. The dsPIC30F devices have up to 8 Kbytes (4K words) of data EEPROM with an address range from 0x7FF000 to 0x7FFFFE. A word write operation should be preceded by an erase of the corresponding memory location(s). The write typ- ically requires 2 ms to complete, but the write time varies with voltage and temperature. A program or erase operation on the data EEPROM does not stop the instruction flow. The user is respon- sible for waiting for the appropriate duration of time before initiating another data EEPROM write/erase operation. Attempting to read the data EEPROM while a programming or erase operation is in progress results in unspecified data. Control bit WR initiates write operations similar to pro- gram Flash writes. This bit cannot be cleared, only set, in software. They are cleared in hardware at the com- pletion of the write operation. The inability to clear the WR bit in software prevents the accidental or premature termination of a write operation. The WREN bit, when set, allows a write operation. On power-up, the WREN bit is clear. The WRERR bit is set when a write operation is interrupted by a MCLR Reset or a WDT Time-out Reset during normal operation. In these situations, following Reset, the user can check the WRERR bit and rewrite the location. The address register NVMADR remains unchanged. 6.1 Reading the Data EEPROM A TBLRD instruction reads a word at the current pro- gram word address. This example uses W0 as a pointer to data EEPROM. The result is placed in register W4 as shown in Example 6-1. EXAMPLE 6-1: DATA EEPROM READ Note: This data sheet summarizes features of this group of dsPIC30F devices and is not intended to be a complete reference source. For more information on the CPU, peripherals, register descriptions and general device functionality, refer to the “dsPIC30F Family Reference Manual” (DS70046). For more information on the device instruction set and programming, refer to the “dsPIC30F/ 33F Programmer’s Reference Manual“ (DS70157). Note: Interrupt flag bit NVMIF in the IFS0 regis- ter is set when write is complete. It must be cleared in software. MOV #LOW_ADDR_WORD,W0 ; Init Pointer MOV #HIGH_ADDR_WORD,W1 MOV W1,TBLPAG TBLRDL [ W0 ], W4 ; read data EEPROM |
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