Data Sheet

ADL8106

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

Rev. B

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FEATURES

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Integrated power supply capacitors and bias inductors

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Integrated ac-coupling capacitors

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Gain: 21.5 dB typical at 30 GHz to 44 GHz

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Input return loss: 12.5 dB typical at 30 GHz to 44 GHz

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Output return loss: 19 dB typical at 30 GHz to 44 GHz

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OP1dB: 14.5 dB typical at 30 GHz to 44 GHz

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PSAT: 19 dBm typical at 30 GHz to 44 GHz

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OIP3: 21.5 dBm typical at 30 GHz to 44 GHz

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Noise figure: 3.5 dB typical at 30 GHz to 44 GHz

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3 V typical supply voltage at 120 mA

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50 Ω matched input and output

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24-terminal, 5.00 mm × 5.00 mm, chip array small outline no lead

cavity [LGA_CAV]

APPLICATIONS

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Test instrumentation

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Military and space

GENERAL DESCRIPTION

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrat-

ed circuit (MMIC), wideband low noise amplifier that operates from

18 GHz to 54 GHz. All the typically required external passive

components for operation (ac coupling capacitors and power supply

decoupling capacitors) are integrated, which facilitates a small and

compact printed circuit board (PCB) footprint.

The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB

compression (OP1dB) of 14.5 dBm, and a typical output third-order

intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106

requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106

is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small

outline no lead cavity (LGA_CAV) package.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram