4

TSC2007-Q1

SBAS545A – SEPTEMBER 2011 – REVISED DECEMBER 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).

(1)

MIN

MAX

UNIT

Analog input voltage

X+, Y+, AUX to GND

–0.4

VDD + 0.1

V

X–, Y– to GND

–0.4

VDD + 0.1

Voltage

VDD/REF pin to GND

–0.3

5

V

Digital input voltage to GND

–0.3

VDD + 0.3

V

Digital output voltage to GND

–0.3

VDD + 0.3

V

Power dissipation

(TJ(MAX) – TA) / RθJA

Operating free-air temperature, TA

–40

85

°C

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

(2)

Test method based on IEC standard 61000-4-2. Contact Texas Instruments for test details.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1)

±8000

V

Charged-device model (CDM), per AEC Q100-011

±1000

IEC 61000-4-2 contact discharge(2)

Pins 2, 3, 4, and 5

±15000

IEC 61000-4-2 air-gap discharge(2)

Pins 2, 3, 4, and 5

±25000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VDD

Power-supply voltage

VDD

1.2

3.6

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TSC2007-Q1

UNIT

PW (TSSOP)

16 PINS

RθJA

Junction-to-ambient thermal resistance

101.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

35.2

°C/W

RθJB

Junction-to-board thermal resistance

47.7

°C/W

ψJT

Junction-to-top characterization parameter

2.4

°C/W

ψJB

Junction-to-board characterization parameter

47

°C/W