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RA4E1 Scheda tecnica(PDF) 64 Page - Renesas Technology Corp |
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RA4E1 Scheda tecnica(HTML) 64 Page - Renesas Technology Corp |
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64 / 81 page ![]() Table 2.40 Code flash memory characteristics (2 of 2) Conditions: Program or erase: FCLK = 4 to 50 MHz Read: FCLK ≤ 50 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Test conditions Min Typ*6 Max Min Typ*6 Max Suspend delay during programming tSPD — — 264 — — 120 µs Programming resume time tPRT — — 110 — — 50 µs First suspend delay during erasure in suspend priority mode tSESD1 — — 216 — — 120 µs Second suspend delay during erasure in suspend priority mode tSESD2 — — 1.7 — — 1.7 ms Suspend delay during erasure in erasure priority mode tSEED — — 1.7 — — 1.7 ms First erasing resume time during erasure in suspend priority mode*5 tREST1 — — 1.7 — — 1.7 ms Second erasing resume time during erasure in suspend priority mode tREST2 — — 144 — — 80 µs Erasing resume time during erasure in erasure priority mode tREET — — 144 — — 80 µs Forced stop command tFD — — 32 — — 20 µs Data hold time*2 tDRP 10*2 *3 — — 10*2 *3 — — Years Note 1. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to the minimum value. Note 2. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range. Note 3. This result is obtained from reliability testing. Note 4. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 10,000), erasing can be performed n times for each block. For example, when 128-byte programming is performed 64 times for different addresses in 8-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address several times as one erasure is not enabled. Overwriting is prohibited. Note 5. Time for resumption includes time for reapplying the erasing pulse (up to one full pulse) that was cut off at the time of suspension. Note 6. The reference value at VCC = 3.3V and room temperature. RA4E1 Datasheet 2. Electrical Characteristics R01DS0391EJ0130 Rev.1.30 Jun 6, 2025 Page 64 of 81 |
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