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MX25R8035F Scheda tecnica(PDF) 76 Page - Macronix International |
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MX25R8035F Scheda tecnica(HTML) 76 Page - Macronix International |
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76 / 89 page ![]() 76 ADVANCED INFORMATION REV. 0.01, JAN. 06, 2015 MX25R8035F P/N: PM2164 Notes: 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 4. For tPRS, Min. time is needed to issue next program suspend command. However, a period of time equal to/or longer than typ. timing is also required to complete the program progress. 5. For tRES, Min. timing is needed to issue next erase suspend command. However, a period of time equal to/or longer than typ. timing is also required to complete the erase progress. 6. If the address range is within 4Mb, the 4READ/QREAD clock rate could achieve to 16MHz for 4READ/QREAD operation. If user wants to keep 4READ/QREAD at 16MHz for address range that is more than 4Mb, it is necessary to re-issue 4READ/QREAD command again after each 4Mb boundary. 7. Test condition is shown as "Figure 42. Input Test Waveforms and Measurement Level", "Figure 43. Output Loading". 8. WRSR speed max. is 33MHz when issuing WRSR for performance mode switch no matter High Performance Mode to Low Power Mode or Low Power Mode to High Performance Mode. 9. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0". 10. The value guaranteed by characterization, not 100% tested in production. Symbol Alt. Parameter Min. Typ.(2) Max. Unit tBP Byte-Program 40 100 us Byte-Program (Applied Vhv at WP# pin) 40 100 us tPP Page Program Cycle Time 1.2 2.4 ms Page Program Cycle Time (Applied Vhv at WP# pin) 0.6 1.2 ms tSE Sector Erase Cycle Time 80 240 ms Sector Erase Cycle Time (Applied Vhv at WP# pin) 70 210 ms tBE32K Block Erase (32KB) Cycle Time 0.4 1.2 s Block Erase (32KB) Cycle Time (Applied Vhv at WP# pin) 0.35 1.0 s tBE Block Erase (64KB) Cycle Time 0.8 2.4 s Block Erase (64KB) Cycle Time (Applied Vhv at WP# pin) 0.7 2.1 s tCE Chip Erase Cycle Time 10 30 s Chip Erase Cycle Time (Applied Vhv at WP# pin) 7 21 s High Performance Mode - Continued: |
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