SST25WF010 datasheet(11/36 Pages) MICROCHIP

11 / 36 page

DS20005016C

11/14

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash

SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040

EOL Data Sheet

Instructions

Instructions are used to read, write (Erase and Program), and configure the SST25WF512/010/020/

040. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The

Write-Enable (WREN) instruction must be executed prior to Byte-Program, Auto Address Increment

(AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions. The

complete instructions are provided in Tables 9 and 10. All instructions are synchronized off a high-to-

low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most signifi-

cant bit. CE# must be driven low before an instruction is entered and must be driven high after the last

bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instruc-

tions). Any low-to-high transition on CE#, before receiving the last bit of an instruction bus cycle, will

terminate the instruction in progress and return the device to standby mode. Instruction commands

(Op Code), addresses, and data are all input from the most significant bit (MSB) first.

Table 9: Device Operation Instructions for SST25WF512 and SST25WF010

Instruction

Description

Op Code Cycle1

Address

Cycle(s)2

Dummy

Cycle(s)

Data

Cycle(s)

Maximum

Frequency

Read

Read Memory

0000 0011b (03H)

1 to



20 MHz

High-Speed Read

Read Memory at Higher

Speed

0000 1011b (0BH)

1 to



40 MHz

4 KByte Sector-

Erase3

Erase 4 KByte of

memory array

0010 0000b (20H)

32 KByte Block-

Erase4

Erase 32 KByte block

of memory array

0101 0010b (52H)

Chip-Erase

Erase Full Memory Array 0110 0000b (60H)

1100 0111b (C7H)

Byte-Program

To Program One Data Byte 0000 0010b (02H)

AAI-Word-Pro-

gram5

Auto Address Increment

Programming

1010 1101b (ADH)

2 to



RDSR6

Read-Status-Register

0000 0101b (05H)

1 to



EWSR7

Enable-Write-Status-

0110 0000b (50H)

WRSR

Write-Status-Register

0000 0001b (01H)

WREN7

Write-Enable

0000 0110b (06H)

WRDI

Write-Disable

0000 0100b (04H)

RDID8

Read-ID

1001 0000b (90H)

1010 1011b (ABH)

1 to



EBSY

Enable SO to output RY/

BY# status during AAI

programming

0111 0000b (70H)

DBSY

Disable SO to output RY/

BY# status during AAI

programming

1000 0000b (80H)

JEDEC-ID

JEDEC ID read

1001 1111b (9FH)

3 to



EHLD

Enable HOLD# pin func-

tionality of the RST#/

HOLD# pin

1010 1010b (AAH)

T9.0

20005016

SST25WF010 Scheda tecnica(PDF) 11 Page - Microchip Technology

SST25WF010 Scheda tecnica(HTML) 11 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

Scheda tecnica Scarica

Link URL