SST25WF010 datasheet(14/36 Pages) MICROCHIP

14 / 36 page

DS20005016C

11/14

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash

SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040

EOL Data Sheet

High-Speed-Read (40 MHz)

The High-Speed-Read instruction supporting up to 40 MHz Read is initiated by executing an 8-bit com-

mand, 0BH, followed by address bits [A23-A0] and a dummy byte. CE# must remain active low for the

duration of the High-Speed-Read cycle. See Figure 7 for the High-Speed-Read sequence.

Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the speci-

fied address location. The data output stream is continuous through all addresses until terminated by a

low-to-high transition on CE#. The internal address pointer will automatically increment until the high-

est memory address is reached. Once the highest memory address is reached, the address pointer

will automatically increment to the beginning (wrap-around) of the address space. For example, for 2

Mbit density, once the data from address location 3FFFFH is read, the next output will be from address

location 000000H.

Figure 7: High-Speed-Read Sequence

1328 F07.0

CE#

SCK

ADD.

012 34 5

6 7 8

ADD.

HIGH IMPEDANCE

15 16

23 24

31 32

39 40

47 48

55 56

63 64

N+2

N+3

N+4

N+1

MSB

MODE 0

MODE 3

DOUT

71 72

DOUT

MSB

SST25WF010 Scheda tecnica(PDF) 14 Page - Microchip Technology

SST25WF010 Scheda tecnica(HTML) 14 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

Scheda tecnica Scarica

Link URL