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SST25WF010 Scheda tecnica(PDF) 20 Page - Microchip Technology |
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SST25WF010 Scheda tecnica(HTML) 20 Page - Microchip Technology |
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20 / 36 page ![]() ©2014 Silicon Storage Technology, Inc. DS20005016C 11/14 20 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040 EOL Data Sheet Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction, 05H, allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write opera- tion is in progress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruc- tion is entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 17 for the RDSR instruction sequence. Figure 17:Read-Status-Register (RDSR) Sequence Write-Enable (WREN) The Write-Enable (WREN) instruction, 06H, sets the Write-Enable-Latch bit in the Status Register to 1 allowing Write operations to occur. The WREN instruction must be executed prior to any Write (Pro- gram/Erase) operation. The WREN instruction may also be used to allow execution of the Write-Sta- tus-Register (WRSR) instruction; however, the Write-Enable-Latch bit in the Status Register will be cleared upon the rising edge CE# of the WRSR instruction. CE# must be driven high before the WREN instruction is executed. See Figure 18 for the WREN instruction sequence. Figure 18:Write Enable (WREN) Sequence 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1327 F17.0 MODE 3 SCK SI SO CE# Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 05 MODE 0 HIGH IMPEDANCE Status Register Out MSB MSB CE# SO SI SCK 01 2 3 4 5 6 7 06 HIGH IMPEDANCE MODE 0 MODE 3 1328 F18.0 MSB |
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