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FS6600 Scheda tecnica(PDF) 90 Page - NXP Semiconductors

Il numero della parte FS6600
Spiegazioni elettronici  Fail-safe system basis chip with multiple SMPS and LDO
PDF  166 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS6600 Scheda tecnica(HTML) 90 Page - NXP Semiconductors

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NXP Semiconductors
FS6600
Fail-safe system basis chip with multiple SMPS and LDO
TA = −40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UVH to 36 V, unless otherwise specified. All voltages referenced to
ground.
Symbol
Parameter
Min
Typ
Max
Unit
To be recalculated for different RSHUNT and different
VPRE_LIM_TH
VPRE_DRV
HS and LS gate driver output voltage
—
VBOS
—
V
60
130
220
mA
120
260
430
mA
220
520
860
mA
IPRE_GATE_DRV
HS and LS gate driver pull up and pulldown current
capability (OTP_VPRESRHS[1:0] and OTP_
VPRESRLS[1:0] bits by default + VPRESRHS[1:0]
and VPRESRLS[1:0] bits by SPI)
420
900
1490
mA
Effective output capacitor for FPRE_SW = 455 kHz
40
66
220
μF
Effective output capacitor for FPRE_SW = 2.22 MHz
20
44
110
µF
COUT_PRE
Output decoupling capacitor
—
0.1
—
μF
Effective input capacitor (Cpi2)
20
—
—
μF
CIN_PRE
Input decoupling capacitor
—
0.1
—
μF
IPRE_DRV
Combined HS + LS gate driver average current
capability
IPRE_DRV < FPRE_SW × (QCHS + QCLS)
with QCHS = gate charge of Q2 at VBOS
with QCLS = gate charge of Q1 at VBOS
—
—
30
mA
gmEAPRE
Error amplifier transconductance
1.0
1.5
2.1
ms
29
40
51
mV/μs
36
50
64
mV/μs
43
60
77
mV/μs
51
70
89
mV/us
58
80
102
mV/μs
65
90
115
mV/μs
73
100
127
mV/μs
102
140
178
mV/μs
124
170
216
mV/μs
146
200
254
mV/μs
VPRE_SLOPE
Slope compensation (OTP_VPRESC[5:0] bits)
175
240
305
mV/μs
TPRE_UV_DFS
VPRE_UVL filtering time to go to DEEP-FS during
VPRE start up
1.8
2
2.2
ms
TPRE_DT
Dead time to avoid cross conduction
(this timing does not take into account the external
FET turn ON/OFF times)
20
30
40
ns
—
250
—
μs
VPRE_OFF_DLY
Wait time between VBOOST OFF and VPRE OFF
(OTP_VPRE_off_dly bit)
—
32
—
ms
RPRE_DIS
Discharge resistor (when VPRE is disabled)
250
500
1000
Ω
IPRE_SW_LKG
PRE_SW leakage
—
—
10
µA
RDRV_OFF
HS and LS gate driver pulldown resistor when
VPRE is disabled
5
—
35
kΩ
RBOOT_OFF
PRE_BOOT pulldown resistor when VPRE is
disabled
1.2
—
2.6
kΩ
Table 79. Electrical characteristics...continued
FS6600
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Product data sheet
Rev. 3 — 17 July 2024
Document feedback
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