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FS6600 Scheda tecnica(PDF) 12 Page - NXP Semiconductors

Il numero della parte FS6600
Spiegazioni elettronici  Fail-safe system basis chip with multiple SMPS and LDO
PDF  166 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS6600 Scheda tecnica(HTML) 12 Page - NXP Semiconductors

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NXP Semiconductors
FS6600
Fail-safe system basis chip with multiple SMPS and LDO
9 Maximum ratings
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanently damage
the device.
Symbol
Parameter
Conditions
Min
Max
Unit
Voltage ratings
VSUP1/2
DC voltage
power supply VSUP1,2 pins
−0.3
60
V
WAKE1/2
DC voltage
WAKE1,2 pins; external serial resistor
mandatory
−1.0
60
V
DC voltage
PRE_SW pin
−2.0
60
V
PRE_SW
Transient voltage < 20 ns
PRE_SW pin
−3.0
60
V
VMONx, FS0B
DC voltage
VMON1,2,3,4, VCOREMON, FS0B
pins
−0.3
60
V
PRE_GHS, PRE_
BOOT
DC voltage
PRE_GHS, PRE_BOOT pins
−0.3
65.5
V
DBG
DC voltage
DBG pin
−0.3
10
V
BOOST_LS
DC voltage
BOOST_LS pin
−0.3
8.5
V
VBOOST, LDO1_IN
DC voltage
VBOOST, LDO1_IN pins
−0.3
6.5
V
BUCKx_IN
DC voltage
BUCK1_IN, BUCK2_IN, BUCK3_IN,
BUCK3_INQ
−1.0
5.5
V
BUCKx_IN
Transient voltage < 3 µs
BUCK1_IN, BUCK2_IN, BUCK3_IN,
BUCK3_INQ
−1.0
6.5
V
BUCKx_SW
Transient voltage < 20 ns
BUCK1_SW, BUCK2_SW, BUCK3_SW
−2.0
6.5
V
All other pins
DC voltage
at all other pins
−0.3
5.5
V
Current ratings
I_WAKE
Maximum current capability
WAKE1,2
−5.0
5.0
mA
I_SUP
Maximum current capability
VSUP1,2
−5.0
—
mA
Table 4. Maximum ratings
10 Electrostatic discharge
10.1 Human body model (JESD22/A114)
The device is protected up to ±2 kV, according to the human body model standard with 100 pF and 1.5 kΩ. This
protection is ensured at all pins.
10.2 Charged device model
The device is protected up to ±500 V, according to the AEC Q100 - 011 charged device model standard. This
protection is ensured at all pins.
10.3 Discharged contact test
The device is protected up to ±8 kV, according to the following discharged contact tests.
Discharged contact test (IEC61000-4-2) at 150 pF and 330 Ω
Discharged contact test (ISO10605.2008) at 150 pF and 2 kΩ
Discharged contact test (ISO10605.2008) at 330 pF and 2 kΩ
FS6600
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Product data sheet
Rev. 3 — 17 July 2024
Document feedback
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