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T25S16AFEPR Scheda tecnica(PDF) 42 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Il numero della parte T25S16AFEPR
Spiegazioni elettronici  3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
PDF  74 Pages
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Produttore elettronici  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Homepage  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

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7.2.1 Page Program (PP) (02h)
The Page Program instruction allows up to 256 bytes of data to be programmed at previously erased to
all 1s (FFh) memory locations. A Write Enable instruction must be executed before the device will accept the
Page Program Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the
CS# pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and at least one
data byte, into the DI pin. The CS# pin must be held low for the entire length of the instruction while data is
being sent to the device. The Page Program instruction sequence is shown in Figure 7.6.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining page
length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a partial
page) can be programmed without having any effect on other bytes within the same page. One condition to
perform a partial page program is that the number of clocks cannot exceed the remaining page length. If more
than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite
previously sent data.
As with the write and erase instructions, the CS# pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After CS# is
driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may still
be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the
Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The
Page Program instruction will not be executed if the addressed page is protected by the Block Protect (TB,
SEC, BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 7.6a Page Program Instruction (SPI Mode)
Figure 7.6b Page Program Instruction(QPI Mode)
7.2.2 Quad Input Page Program (32h)
The Quad Input Page Program instruction allows up to 256 byte of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2 and IO3. The Quad Input Page Program can
improved performance for PROM Programmer and applications that have slow clock speeds<5MHz. Systems
with faster clock speed will not realize much benefit for the Quad Input Page Program instruction since the
inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
HM25Q128A



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