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TMS320C80GF Scheda tecnica(PDF) 15 Page - Texas Instruments |
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TMS320C80GF Scheda tecnica(HTML) 15 Page - Texas Instruments |
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15 / 171 page ![]() TMS320C80 DIGITAL SIGNAL PROCESSOR SPRS023B – JULY 1994 – REVISED OCTOBER 1997 12 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 Terminal Functions TERMINAL DESCRIPTION NAME TYPE† DESCRIPTION LOCAL MEMORY INTERFACE A31 – A0 O Address bus. A31 – A0 output the 32-bit byte address of the external memory cycle. The address can be multiplexed for DRAM accesses. AS2 – AS0 I Address-shift selection. AS2 – AS0 determine how the column address appears on the address bus. Eight shift values are supported, including zero. BS1 – BS0 I Bus-size selection. BS1 – BS0 indicate the bus size of the memory or other device being accessed, allowing dynamic bus sizing for data buses less than 64-bits wide. CT2 – CT0 I Cycle-timing selection. CT2 – CT0 signals determine the timing of the current memory access. D63 – D0 I/O Data bus. D63 – D0 transfer up to 64 bits of data per memory cycle into or out of the ’C80. DBEN O Data-buffer enable. DBEN drives the active-low output-enables of bi-directional transceivers that can be used to buffer input and output data on D63 – D0. DDIN O Data-direction indicator. DDIN indicates the direction of the data that passes through the transceivers. When DDIN is low, the transfer is from external memory into the ’C80. FAULT I Fault. FAULT is driven low by external circuitry to inform the ’C80 that a fault has occurred on the current memory row-access. PS3 – PS0 I Page-size indication. PS3 – PS0 indicate the page size of the memory device(s) being accessed by the current cycle. The ’C80 uses this information to determine when to begin a new row-access. READY I Ready. READY indicates that the external device is ready to complete the memory cycle. READY is driven low by external circuitry to insert wait states into a memory cycle. RL O Row latch. The high-to-low transition of RL can be used to latch the valid 32-bit byte address that is present on A31 – A0. RETRY I Retry. RETRY is driven low by external circuitry to indicate that the addressed memory is busy. The ’C80 memory cycle is rescheduled. STATUS5 – STATUS0 O Status code. At row time, STATUS5 – STATUS0 indicate the type of cycle being performed. At column time, they identify the processor and type of request that initiated the cycle. UTIME I User-timing selection. UTIME causes the timing of RAS and CAS / DQM7 – CAS / DQM0 to be modified so that custom memory timings can be generated. During reset, UTIME selects the endian mode in which the ’C80 operates. DRAM, VRAM, AND SDRAM CONTROL CAS / DQM7 – CAS / DQM0 O Column-address strobes. CAS / DQM7 – CAS / DQM0 drive the CAS inputs of DRAMs and VRAMs, or the DQM input of SDRAMs. The eight strobes provide byte-write access to memory. DSF O Special function. DSF selects special VRAM functions such as block-write, load color register, split-register transfer, and SGRAM block write. RAS O Row-address strobe. RAS drives the RAS inputs of DRAMs, VRAMs, and SDRAMs. TRG / CAS O Transfer / output enable or column-address strobe. TRG / CAS is used as an output-enable for DRAMs and VRAMs, and also as a transfer-enable for VRAMs. TRG / CAS also drives the CAS inputs of SDRAMs. W O Write enable. W is driven low before CAS during write cycles. W controls the direction of the transfer during VRAM transfer cycles. † I = input, O = output, Z = high impedance |
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