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TMS320C80GF Scheda tecnica(PDF) 15 Page - Texas Instruments

Il numero della parte TMS320C80GF
Spiegazioni elettronici  DIGITAL SIGNAL PROCESSOR
PDF  171 Pages
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TMS320C80GF Scheda tecnica(HTML) 15 Page - Texas Instruments

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TMS320C80
DIGITAL SIGNAL PROCESSOR
SPRS023B – JULY 1994 – REVISED OCTOBER 1997
12
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
Terminal Functions
TERMINAL
DESCRIPTION
NAME
TYPE†
DESCRIPTION
LOCAL MEMORY INTERFACE
A31 – A0
O
Address bus. A31 – A0 output the 32-bit byte address of the external memory cycle. The address can be
multiplexed for DRAM accesses.
AS2 – AS0
I
Address-shift selection. AS2 – AS0 determine how the column address appears on the address bus. Eight
shift values are supported, including zero.
BS1 – BS0
I
Bus-size selection. BS1 – BS0 indicate the bus size of the memory or other device being accessed, allowing
dynamic bus sizing for data buses less than 64-bits wide.
CT2 – CT0
I
Cycle-timing selection. CT2 – CT0 signals determine the timing of the current memory access.
D63 – D0
I/O
Data bus. D63 – D0 transfer up to 64 bits of data per memory cycle into or out of the ’C80.
DBEN
O
Data-buffer enable. DBEN drives the active-low output-enables of bi-directional transceivers that can be
used to buffer input and output data on D63 – D0.
DDIN
O
Data-direction indicator. DDIN indicates the direction of the data that passes through the transceivers. When
DDIN is low, the transfer is from external memory into the ’C80.
FAULT
I
Fault. FAULT is driven low by external circuitry to inform the ’C80 that a fault has occurred on the current
memory row-access.
PS3 – PS0
I
Page-size indication. PS3 – PS0 indicate the page size of the memory device(s) being accessed by the
current cycle. The ’C80 uses this information to determine when to begin a new row-access.
READY
I
Ready. READY indicates that the external device is ready to complete the memory cycle. READY is driven
low by external circuitry to insert wait states into a memory cycle.
RL
O
Row latch. The high-to-low transition of RL can be used to latch the valid 32-bit byte address that is present
on A31 – A0.
RETRY
I
Retry. RETRY is driven low by external circuitry to indicate that the addressed memory is busy. The ’C80
memory cycle is rescheduled.
STATUS5 – STATUS0
O
Status code. At row time, STATUS5 – STATUS0 indicate the type of cycle being performed. At column time,
they identify the processor and type of request that initiated the cycle.
UTIME
I
User-timing selection. UTIME causes the timing of RAS and CAS / DQM7 – CAS / DQM0 to be modified so
that custom memory timings can be generated. During reset, UTIME selects the endian mode in which the
’C80 operates.
DRAM, VRAM, AND SDRAM CONTROL
CAS / DQM7 –
CAS / DQM0
O
Column-address strobes. CAS / DQM7 – CAS / DQM0 drive the CAS inputs of DRAMs and VRAMs, or the
DQM input of SDRAMs. The eight strobes provide byte-write access to memory.
DSF
O
Special function. DSF selects special VRAM functions such as block-write, load color register, split-register
transfer, and SGRAM block write.
RAS
O
Row-address strobe. RAS drives the RAS inputs of DRAMs, VRAMs, and SDRAMs.
TRG / CAS
O
Transfer / output enable or column-address strobe. TRG / CAS is used as an output-enable for DRAMs and
VRAMs, and also as a transfer-enable for VRAMs. TRG / CAS also drives the CAS inputs of SDRAMs.
W
O
Write enable. W is driven low before CAS during write cycles. W controls the direction of the transfer during
VRAM transfer cycles.
† I = input, O = output, Z = high impedance



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