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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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MB90F482 Scheda tecnica(PDF) 105 Page - fujitsu semiconductor |
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MB90F482 Scheda tecnica(HTML) 105 Page - fujitsu semiconductor |
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105 / 113 page  MB90480/485 Series 105 • Flash Memory Program/Erase Characteristics • Use of the X0/X1, X0A/X1A pins • Sample use with external clock input Parameter Conditions Value Unit Remarks Min Typ Max Sector erase time TA = + 25 °C, VCC = 3.0 V 115 s Excludes 00H programming prior erasure Chip erase time 7 s Excludes 00H programming prior erasure Word (16-bit) programming time 16 3,600 µs Excludes system-level overhead Program/Erase cycle 10,000 cycle Data hold time 100,000 h X1 C3 C4 C2 C1 X0 X0A X1A When used with a crystal oscillator Pull-up resistance 1 Damping resistance 1 Damping resistance 2 Internal damping resistance 0 In normal use : Internal damping resistance 1 : Typ 600 Ω Consult with the oscillator manufacturer. Pull-up resistance 1, Damping resistance 1, 2, C1 to C4 X0 X1 OPEN MB90480/485 series |
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