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CC2640R2FYFVT.B Scheda tecnica(PDF) 30 Page - Texas Instruments |
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CC2640R2FYFVT.B Scheda tecnica(HTML) 30 Page - Texas Instruments |
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30 / 74 page ![]() PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TA = 25°C, VDDS = 3.8 V GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 277 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 113 µA GPIO high/low input transition, no hysteresis IH = 0, transition between reading 0 and reading 1 1.67 V GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.94 V GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 1.54 V GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.4 V TA = 25°C VIH Lowest GPIO input voltage reliably interpreted as a «High» 0.8 VDDS(1) VIL Highest GPIO input voltage reliably interpreted as a «Low» 0.2 VDDS(1) (1) Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 11.3 for more details. 8.26 Thermal Resistance Characteristics NAME DESCRIPTION RSM (°C/W)(1) (2) RHB (°C/W)(1) (2) RGZ (°C/W)(1) (2) YFV (°C/W)(1) (2) RθJA Junction-to-ambient thermal resistance 36.9 32.8 29.6 76.2 RθJC(top) Junction-to-case (top) thermal resistance 30.3 24.0 15.7 0.3 RθJB Junction-to-board thermal resistance 7.6 6.8 6.2 16.3 PsiJT Junction-to-top characterization parameter 0.4 0.3 0.3 1.8 PsiJB Junction-to-board characterization parameter 7.4 6.8 6.2 16.3 RθJC(bot) Junction-to-case (bottom) thermal resistance 2.1 1.9 1.9 N/A (1) °C/W = degrees Celsius per watt. (2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/ JEDEC standards: • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air). • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements. For RSM, RHB, and RGZ, power dissipation of 2 W and an ambient temperature of 70°C is assumed. For YFV, power dissipation of 1.3 W and ambient temperature of 25°C is assumed. 8.27 Timing Requirements MIN NOM MAX UNIT Rising supply-voltage slew rate 0 100 mV/µs Falling supply-voltage slew rate 0 20 mV/µs Falling supply-voltage slew rate, with low-power flash settings(1) 3 mV/µs Positive temperature gradient in standby(2) No limitation for negative temperature gradient, or outside standby mode 5 °C/s CONTROL INPUT AC CHARACTERISTICS(3) RESET_N low duration 1 µs (1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see Figure 10-1) must be used to ensure compliance with this slew rate. (2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see Section 8.17). (3) TA = –40°C to +85°C, VDDS = 1.7 V to 3.8 V, unless otherwise noted. CC2640R2F SWRS204C – DECEMBER 2016 – REVISED SEPTEMBER 2020 www.ti.com 30 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: CC2640R2F |
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