STR750F datasheet(63/73 Pages) STMICROELECTRONICS

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STR750F

Electrical parameters

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3.3.11

USB characteristics

The USB interface is USB-IF certified (Low Speed and High Speed).

Figure 29.

USB: data signal rise and fall time

Table 38.

USB characteristics

USB DC Electrical Characteristics

Symbol

Parameter

Conditions

Min.(1)(2)

All the voltages are measured from the local ground potential.

It is important to be aware that the DP/DM pins are not 5 V tolerant. As a consequence, in case of a a

shortcut with Vbus (typ: 5.0V), the protection diodes of the DP/DM pins will be direct biased . This will not

damage the device if not more than 50 mA is sunk for longer than 24 hours but the reliability may be

affected.

Max.(1)(2) Unit

Input Levels

VDI

Differential Input Sensitivity

I(DP, DM)

0.2

VCM

Differential Common Mode

Range

Includes VDI range

0.8

2.5

VSE

Single Ended Receiver

Threshold

1.3

2.0

Output Levels

VOL

Static Output Level Low

RL of 1.5 kΩ to 3.6V

(3)

RL is the load connected on the USB drivers

0.3

VOH

Static Output Level High

RL of 15 kΩ to VSS

(3)

2.8

3.6

Table 39.

USB: Full speed electrical characteristics

Symbol

Parameter

Conditions

Min

Max

Unit

Driver characteristics:

Rise time(1)

Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

CL=50 pF

420

Fall Time1)

CL=50 pF

trfm

Rise/ Fall Time matching

tr/tf

110

VCRS

Output signal Crossover Voltage

1.3

2.0

Differential

Data Lines

VSS

Crossover

points

VCRS

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