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FS26 Scheda tecnica(PDF) 25 Page - NXP Semiconductors

Il numero della parte FS26
Spiegazioni elettronici  Safety system basis chip with low power for ASIL D/ASIL B
PDF  156 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS26 Scheda tecnica(HTML) 25 Page - NXP Semiconductors

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NXP Semiconductors
FS26
Safety system basis chip with low power for ASIL D/ASIL B
14 Current consumption
TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages
are referenced to ground.
Symbol
Description
Min
Typ
Max
Unit
Quiescent current
IQ_NORMAL
Current consumption in normal mode on the battery:
• VSUP = VSUP_PWR = 13.5 V (including current from BATSENSE pin)
• VBST enabled but not switching.
• VPRE output voltage set at 5.5 V
• LPRE = 10 µH
• VCORE enabled and output voltage set at 1.5 V
• LDO1 enabled and output voltage set at 5.0 V
• LDO2 enabled and output voltage set at 3.3 V
• TRK1 and TRK2 enabled and output voltage set at 5 V
• VREF enabled and output voltage set at 5 V
• Long Duration Timer enabled
• All regulators output current = 0 A
15
25
mA
Current consumption in standby mode on the battery
• TA = 25 °C
• TA = 40 °C[2]
• TA = 85 °C[2]
32
36
40
—
—
60
µA
IQ_STBY[1]
• VSUP = VSUP_PWR = 12 V, 18 V (including current from BATSENSE pin)
• VPRE_PFM = 3.7 V (PFM mode)
• LPRE = 10 μH
• LDO1 enabled, VLDO1 = 3.3 V
• LDO2 disabled. Typ 3 μA additional on VSUP when enabled at 3.3 V
• Long Duration Timer disabled, < 1 µA when enabled.
• GPIOx disabled in standby
• RSTB released, pulled up to VPRE_PFM
• FS0B = 0 and FS1B = 0 pulled up to a disabled supply in standby mode.
Current consumption in standby mode on the battery
• TA = 25 °C
• TA = 85 °C[2]
90
110
—
130
µA
IQ_STBY
• VSUP = VSUP_PWR = 5.4 V (including current from BATSENSE pin)
• VPRE_PFM = 3.7 V and 5.05 V (PFM mode)
• LPRE = 10 µH
• LDO1 enabled, VLDO1 = 3.3 V when VPRE_PFM = 3.7 V, VLDO1 = 5.0 V when VPRE_PFM =
5.05 V.
• LDO2 disabled. Typ 3 μA additional on VSUP when enabled at 3.3 V
• Long Duration Timer disabled. < 1 µA when enabled.
• GPIOx disabled in standby
• RSTB released, pulled up to VPRE_PFM
• FS0B = 0 and FS1B = 0 pulled up to a disabled supply in standby mode.
Current consumption in LPOFF mode and Deep Fail Safe (DFS) state on the battery
• TA = 25 °C
• TA = 40 °C[2]
• TA = 85 °C[2]
30
32
40
—
—
60
µA
IQ_LPOFF, IQ_DFS
• VSUP = VSUP_PWR = 5.4 V, 12 V, 18 V
• (Including current from BATSENSE pin)
• All regulators are disabled.
• Long Duration Timer disabled. < 1 µA when enabled.
• GPIOx disabled in LPOFF
Table 9. Electrical characteristics
[1]
VBAT current is reduced in standby mode due to the ratio between VBAT and VPRE voltages.
[2]
Guaranteed by characterization. Tested in production at 25 °C only.
FS26_SDS
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product short data sheet
Rev. 6.0 — 12 December 2025
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