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FS26 Scheda tecnica(PDF) 101 Page - NXP Semiconductors |
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FS26 Scheda tecnica(HTML) 101 Page - NXP Semiconductors |
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101 / 156 page ![]() NXP Semiconductors FS26 Safety system basis chip with low power for ASIL D/ASIL B TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages are referenced to ground. Symbol Description Min Typ Max Unit CORE_ILIM_OTP[1:0] = 01, 10 or 11 1.15 1.7 2.3 VCORE inductor peak current limitation for FS262x and FS263x ICORE_PEAK_1A65 CORE_ILIM_OTP[1:0] = 00 CORE_ILIM_OTP[1:0] = 01 CORE_ILIM_OTP[1:0] = 10 CORE_ILIM_OTP[1:0] = 11 0.9 1.15 2.0 2.5 1.4 1.7 2.7 3.4 1.9 2.2 3.4 4.3 A ηCORE_PEAK Peak efficiency in PWM mode VPRE_PWM = 5.5 V, VCORE = 1.5 V, ICORE = 800 mA LCORE = 1 µH with DCR = 30 mΩ COUT_CORE = 20 µF (effective capacitance) — 87 — % RHS_CORE High-side on-resistance (VBOS = 5 V, including bonding) — 75 150 mΩ RLS_CORE Low-side on-resistance (VBOS = 5 V, including bonding) — 75 150 mΩ RCORE_DIS Discharge resistor (when VCORE is disabled – LP OFF) 50 100 200 Ω TSDCORE Thermal shutdown threshold 175 — — °C TSDCORE_HYS Thermal shutdown threshold hysteresis 5 — 12 °C Dynamic electrical characteristics Dead time to avoid cross conduction tVCORE_DEAD COREHS_SR_OTP[1:0] = 01 COREHS_SR_OTP[1:0] = 10 COREHS_SR_OTP[1:0] = 00 or 11 10 5 5 — — — 40 30 25 ns Switching node slew rate (rising) tCORESW_HSSRR[1] COREHS_SR_OTP[1:0] = 00 COREHS_SR_OTP[1:0] = 01 COREHS_SR_OTP[1:0] = 10 COREHS_SR_OTP[1:0] = 11 2.5 2 2.25 2.5 5 4 4.5 5 — — — — V/ns Switching node slew rate (falling) tCORESW_HSSRF[1] COREHS_SR_OTP[1:0] = 00 COREHS_SR_OTP[1:0] = 01 COREHS_SR_OTP[1:0] = 10 COREHS_SR_OTP[1:0] = 11 1 0.25 0.5 1 2.2 0.6 1.2 2.2 — — — — V/ns Soft start ramp rate from 10 % to 90 % (DVS up and down) VCORE_SS CORE_SS_OTP[1:0] = 00 CORE_SS_OTP[1:0] = 01 CORE_SS_OTP[1:0] = 10 CORE_SS_OTP[1:0] = 11 (COUT_CORE < 80 μF nominal) 2 4 8 16 2.5 5 10 20 3 6 12 24 mV/µs VCORE_LOTR1 Transient load response for VCORE ≥ 1.0 V 10 mA to 800 mA step and 800 mA to 10 mA step with di/dt = 300 mA/µs, COUT_CORE ≥ 22 µF, LCORE = 1.0 µH -3 — 3 % VCORE_LOTR2 Transient load response for VCORE ≤ 1.0 V 10 mA to 800 mA step and 800 mA to 10 mA step with di/dt = 300 mA/µs, COUT_CORE ≥ 40 µF, LCORE = 1.0 µH -30 — 30 mV FCORE Operating frequency in PWM mode 2.0 2.25 2.50 MHz tCORE_ONOFF_MIN_P HS minimum ON and OFF time in peak current mode 10 45 72 ns Table 106. VCORE electrical characteristics...continued FS26_SDS All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product short data sheet Rev. 6.0 — 12 December 2025 Document feedback 101 / 156 |
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