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FS26 Scheda tecnica(PDF) 101 Page - NXP Semiconductors

Il numero della parte FS26
Spiegazioni elettronici  Safety system basis chip with low power for ASIL D/ASIL B
PDF  156 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

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NXP Semiconductors
FS26
Safety system basis chip with low power for ASIL D/ASIL B
TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise
specified. All voltages are referenced to ground.
Symbol
Description
Min
Typ
Max
Unit
CORE_ILIM_OTP[1:0] = 01, 10 or 11
1.15
1.7
2.3
VCORE inductor peak current limitation for FS262x and FS263x
ICORE_PEAK_1A65
CORE_ILIM_OTP[1:0] = 00
CORE_ILIM_OTP[1:0] = 01
CORE_ILIM_OTP[1:0] = 10
CORE_ILIM_OTP[1:0] = 11
0.9
1.15
2.0
2.5
1.4
1.7
2.7
3.4
1.9
2.2
3.4
4.3
A
ηCORE_PEAK
Peak efficiency in PWM mode
VPRE_PWM = 5.5 V, VCORE = 1.5 V, ICORE = 800 mA
LCORE = 1 µH with DCR = 30 mΩ
COUT_CORE = 20 µF (effective capacitance)
—
87
—
%
RHS_CORE
High-side on-resistance
(VBOS = 5 V, including bonding)
—
75
150
mΩ
RLS_CORE
Low-side on-resistance
(VBOS = 5 V, including bonding)
—
75
150
mΩ
RCORE_DIS
Discharge resistor (when VCORE is disabled – LP OFF)
50
100
200
Ω
TSDCORE
Thermal shutdown threshold
175
—
—
°C
TSDCORE_HYS
Thermal shutdown threshold hysteresis
5
—
12
°C
Dynamic electrical characteristics
Dead time to avoid cross conduction
tVCORE_DEAD
COREHS_SR_OTP[1:0] = 01
COREHS_SR_OTP[1:0] = 10
COREHS_SR_OTP[1:0] = 00 or 11
10
5
5
—
—
—
40
30
25
ns
Switching node slew rate (rising)
tCORESW_HSSRR[1]
COREHS_SR_OTP[1:0] = 00
COREHS_SR_OTP[1:0] = 01
COREHS_SR_OTP[1:0] = 10
COREHS_SR_OTP[1:0] = 11
2.5
2
2.25
2.5
5
4
4.5
5
—
—
—
—
V/ns
Switching node slew rate (falling)
tCORESW_HSSRF[1]
COREHS_SR_OTP[1:0] = 00
COREHS_SR_OTP[1:0] = 01
COREHS_SR_OTP[1:0] = 10
COREHS_SR_OTP[1:0] = 11
1
0.25
0.5
1
2.2
0.6
1.2
2.2
—
—
—
—
V/ns
Soft start ramp rate from 10 % to 90 % (DVS up and down)
VCORE_SS
CORE_SS_OTP[1:0] = 00
CORE_SS_OTP[1:0] = 01
CORE_SS_OTP[1:0] = 10
CORE_SS_OTP[1:0] = 11 (COUT_CORE < 80 μF nominal)
2
4
8
16
2.5
5
10
20
3
6
12
24
mV/µs
VCORE_LOTR1
Transient load response for VCORE ≥ 1.0 V
10 mA to 800 mA step and 800 mA to 10 mA step
with di/dt = 300 mA/µs, COUT_CORE ≥ 22 µF, LCORE = 1.0 µH
-3
—
3
%
VCORE_LOTR2
Transient load response for VCORE ≤ 1.0 V
10 mA to 800 mA step and 800 mA to 10 mA step
with di/dt = 300 mA/µs, COUT_CORE ≥ 40 µF, LCORE = 1.0 µH
-30
—
30
mV
FCORE
Operating frequency in PWM mode
2.0
2.25
2.50
MHz
tCORE_ONOFF_MIN_P
HS minimum ON and OFF time in peak current mode
10
45
72
ns
Table 106. VCORE electrical characteristics...continued
FS26_SDS
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product short data sheet
Rev. 6.0 — 12 December 2025
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