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IMX53IEC Scheda tecnica(PDF) 35 Page - Freescale Semiconductor, Inc |
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IMX53IEC Scheda tecnica(HTML) 35 Page - Freescale Semiconductor, Inc |
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35 / 173 page ![]() Electrical Characteristics i.MX53 Applications Processors for Industrial Products, Rev. 6 Freescale Semiconductor 35 Table 18 shows DDR output driver average impedance of the i.MX53 processor. Table 18. DDR Output Driver Average Impedance1 1 Output driver impedance is controlled across PVTs (process, voltages, and temperatures) using calibration procedure and pu_*cal, pd_*cal input pins. Parameter Symbol Test Conditions Drive strength (DSE) Unit 000 001 010 011 100 101 110 111 Output Driver Impedance Rdrv2 2 Output driver impedance deviation (calibration accuracy) is ±5% (max/min impedance) across PVTs. LPDDR1/DDR2 mode NVCC_DRAM = 1.8 V DDR_SEL = 00 Calibration resistance = 300 Ω3 3 Calibration is done against external reference resistor. Value of the resistor should be varied depending on DDR mode and DDR_SEL setting. Hi-Z 300 150 100 75 60 50 43 Ω DDR2 mode NVCC_DRAM = 1.8 V DDR_SEL = 01 Calibration resistance = 180 Ω3 Hi-Z 180 90 60 45 36 30 26 DDR2 mode NVCC_DRAM = 1.8 V DDR_SEL = 10 Calibration resistance = 200 Ω3 Hi-Z 200 100 66 50 40 33 28 DDR2 mode NVCC_DRAM= 1.8 V DDR_SEL = 11 Calibration resistance = 140 Ω3 Hi-Z 140 70 46 35 28 23 20 LPDDR2 mode NVCC_DRAM= 1.2 V DDR_SEL = 014 Calibration resistance = 160 Ω3 4 If DDR_SEL = ‘01’ or DDR_SEL = ‘11’ are selected with NVCC_DRAM = 1.2 V for LPDDR2 operation, the external reference resistor value must be 160 Ω for a correct ZQ calibration. In any case, reference resistors attached to the DDR memory devices should be kept to 240 Ω per the JEDEC standard. Hi-Z 160 80 53 40 32 27 23 LPDDR2 mode NVCC_DRAM = 1.2 V DDR_SEL = 10 Calibration resistance = 240 Ω3 Hi-Z 240 120 80 60 48 40 34 LPDDR2 mode NVCC_DRAM = 1.2 V DDR_SEL = 114 Calibration resistance = 160 Ω3 Hi-Z 160 80 53 40 32 27 23 DDR3 mode NVCC_DRAM = 1.5 V DDR_SEL = 00 Calibration resistance = 200 Ω3 Hi-Z 240 120 80 60 48 48 34 |
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