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GD25S513MDFEG Scheda tecnica(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25S513MDFEG Scheda tecnica(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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4 / 94 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25S513MD 4 1. FEATURES ◆ 2 x 256M-bit Serial Flash ◆ Fast Program/Erase Speed - 2 x 32M-Byte - Page Program time: 0.4ms typical - 256-Byte per programmable page - Sector Erase time: 70ms typical - Block Erase time: 0.16/0.22s typical ◆ Standard, Dual, Quad SPI, DTR - Chip Erase time: 70s typical (single die) - Standard SPI: SCLK, CS#, SI, SO, RESET# - Dual SPI: SCLK, CS#, IO0, IO1, RESET# ◆ Flexible Architecture - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Sectors of 4K-Byte - SPI DTR (Double Transfer Rate) Read - Uniform Blocks of 32/64K-Byte - On-chip ECC (1-bit correction every 8-Byte) (1) - 3 or 4-Byte Addressing Mode ◆ Low Power Consumption - 2uA typical deep power down current ◆ High Speed Clock Frequency - 24uA typical standby current - Maximum 104MHz for fast read on 3.0 - 3.6V power supply ◆ Dual I/O Data transfer up to 208Mbits/s ◆ Advanced Security Feature ◆ Quad I/O Data transfer up to 416Mbits/s - 6x2048-Byte Security Registers With OTP Locks ◆ DTR Quad I/O Data transfer up to 640Mbits/s - 128-bit Unique ID for individual die - Maximum 80MHz for fast read on 2.7 - 3.0V power supply - Serial Flash Discoverable parameters (SFDP) register ◆ Dual I/O Data transfer up to 160Mbits/s ◆ Quad I/O Data transfer up to 320Mbits/s ◆ Single Power Supply Voltage ◆ DTR Quad I/O Data transfer up to 560Mbits/s - Full voltage range: 2.7 - 3.6V ◆ Software Write Protection ◆ Cycling Endurance and Data Retention - Write protect all/portion of memory via software - Minimum 100,000 Program/Erase Cycles - Top/Bottom Block protection - 20-year data retention typical ◆ Flexible “Concurrent Operation” ◆ Package Information - Independent single die access - SOP16 (300mil) - Allows “Read while Program/Erase” - WSON8 (8x6mm) - Allows “Multi Die Program/Erase” - TFBGA-24 (5x5 ball array) - Improves Program/Erase throughput - Reduces Suspend/Resume activities Note: 1. When ECC is enabled, it is required to program minimum one or multiple aligned 8-Byte granularities. Every aligned 8- Byte granularity should only be programmed once before Erase to ensure correct ECC operations. |
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