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GD25S513MDFEG Scheda tecnica(PDF) 40 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25S513MDFEG Scheda tecnica(HTML) 40 Page - GigaDevice Semiconductor (Beijing) Inc. |
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40 / 94 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25S513MD 40 8.16. Quad I/O DTR Read (DTRQIO) (EEH or EDH) The DTRQIO instruction enables Double Transfer Rate throughput on quad I/O of Serial Flash in read mode. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCLK. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at rising edge of clock, the other four bits at falling edge of clock. The first address Byte can be at any location. The address is automatically increased to the next higher address in a single GD25B257D after each Byte data is shifted out, so the whole memory of single GD25B257D can be read out at a single DTRQIO instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DTRQIO instruction, the following address/dummy/data out will perform as 8-bit instead of previous 1-bit. While Program/Erase/Write Status Register cycle is in progress, DTRQIO instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle Figure 31. DTR Quad I/O Fast Read Sequence Diagram (ADS=0) Figure 32. DTR Quad I/O Fast Read Sequence Diagram (ADS=1) High-Z 0 1 2 3 4 5 6 7 EDH CS# SCLK IO0 IO1 8 9 10 11 18 19 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 A23-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 IO2 Dummy Byt e1 Byte2 M7-0 DQS IO3 Command Command 0 1 2 3 4 5 6 7 EDH CS# SCLK IO0 IO1 8 9 10 11 19 20 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 A31-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 IO2 Byt e1 Byte2 M7-0 DQS IO3 4 0 5 1 6 2 7 3 12 High-Z Dummy |
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